Transmission Electron Microscopy of Semiconductor Nanostructures

Transmission Electron Microscopy of Semiconductor Nanostructures PDF Author: Andreas Rosenauer
Publisher:
ISBN: 9783662146170
Category :
Languages : en
Pages : 256

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Book Description

Transmission Electron Microscopy of Semiconductor Nanostructures

Transmission Electron Microscopy of Semiconductor Nanostructures PDF Author: Andreas Rosenauer
Publisher:
ISBN: 9783662146170
Category :
Languages : en
Pages : 256

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Book Description


Transmission Electron Microscopy of Semiconductor Nanostructures

Transmission Electron Microscopy of Semiconductor Nanostructures PDF Author: Andreas Rosenauer
Publisher: Springer
ISBN: 3540364072
Category : Science
Languages : en
Pages : 238

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Book Description
This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.

Analyzing Semiconductor Nanostructures by Scanning Transmission Electron Microscopy

Analyzing Semiconductor Nanostructures by Scanning Transmission Electron Microscopy PDF Author: Teya Topuria
Publisher:
ISBN:
Category :
Languages : en
Pages : 312

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Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures PDF Author: Laura Lazzarini
Publisher: Elsevier Inc. Chapters
ISBN: 0128083433
Category : Science
Languages : en
Pages : 78

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Book Description


Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization

Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization PDF Author: Richard Haight
Publisher: World Scientific
ISBN: 9814322849
Category : Science
Languages : en
Pages : 346

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Book Description
As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.

Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures

Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures PDF Author: Chun Maw Tey
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description


Transmission Electron Microscopy of Semiconductor Nanostructures

Transmission Electron Microscopy of Semiconductor Nanostructures PDF Author: Andreas Rosenauer
Publisher: Springer Science & Business Media
ISBN: 3540004149
Category : Science
Languages : en
Pages : 238

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Book Description
This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.

Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy

Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy PDF Author: 李仁宏
Publisher:
ISBN:
Category :
Languages : en
Pages : 117

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Book Description


Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures

Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures PDF Author: Maxim Korytov
Publisher:
ISBN:
Category :
Languages : en
Pages : 180

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Book Description
The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.

Advanced Transmission Electron Microscopy

Advanced Transmission Electron Microscopy PDF Author: Jian Min Zuo
Publisher: Springer
ISBN: 1493966073
Category : Technology & Engineering
Languages : en
Pages : 741

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Book Description
This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.