Author: J. J. WortmanPublisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 100
Book Description
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Author: T. M. Royal
Author: Carl R. Pearson
Author: Carl Raymond Pearson
Author: T. M. Royal
Author: E. Gnaiger
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Author: United States. Superintendent of Documents