Author: Else Kooi
Publisher:
ISBN: 9783662402115
Category :
Languages : en
Pages : 148
Book Description
The Surface Properties of Oxidized Silicon
Author: Else Kooi
Publisher:
ISBN: 9783662402115
Category :
Languages : en
Pages : 148
Book Description
Publisher:
ISBN: 9783662402115
Category :
Languages : en
Pages : 148
Book Description
The Surface Properties of Oxidized Silicon [By] E. Kooi
Author: E. Kooi
Publisher:
ISBN:
Category : Silica
Languages : en
Pages : 134
Book Description
Publisher:
ISBN:
Category : Silica
Languages : en
Pages : 134
Book Description
The Surface Properties of Oxidized Silicon
Author: Else Kooi (Jzn.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
The Surface Properties of Oxidized Silicon
Author: Else Kooi
Publisher: Springer
ISBN: 3662402106
Category : Science
Languages : en
Pages : 143
Book Description
Publisher: Springer
ISBN: 3662402106
Category : Science
Languages : en
Pages : 143
Book Description
The Surface Properties of Oxidized Silicon
Author: Else Kooi
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Thyristor Physics
Author: A. Blicher
Publisher: Springer Science & Business Media
ISBN: 1461298776
Category : Science
Languages : en
Pages : 320
Book Description
In this volume I attempt to present concisely the physical principles underlying the operation and performance characteristics of the class of semiconductor p-n-p-n switches known as thyristors. The semiconductor controlled rectifier (SCR), the triode AC switch (Triac) the gate turn-off switch (GTO), and the reverse conducting thyristor (RCT) are some of the most important devices belonging to this device family. This book is aimed both at semiconductor-device physicists, designers, and students and at those electronic circuit designers who wish to apply thyristors creatively without the limitation of con sidering them as "black boxes," described only by insufficiently understood electrical ratings. The book endeavors to present an up-to-date account of the progress made in understanding the operation, potentialities, and limitations of thyristors as switching circuit elements. It assumes some basic knowledge of transistor physics and stresses the phe nomenological aspects of thyristor theory with the use of mathe matics not going beyond calculus and differential equations. The first two chapters discuss basic thyristor operation theory. The sub sequent chapters are devoted to the study of the static and dynamic properties of the SCR, the RCT, the GTO, and the triac; they in clude discussions of forward voltage drops, maximum voltage blocking capabilities, turn-on and turn-off transients, current and voltage rise rates, and desirable and undesirable triggering effects.
Publisher: Springer Science & Business Media
ISBN: 1461298776
Category : Science
Languages : en
Pages : 320
Book Description
In this volume I attempt to present concisely the physical principles underlying the operation and performance characteristics of the class of semiconductor p-n-p-n switches known as thyristors. The semiconductor controlled rectifier (SCR), the triode AC switch (Triac) the gate turn-off switch (GTO), and the reverse conducting thyristor (RCT) are some of the most important devices belonging to this device family. This book is aimed both at semiconductor-device physicists, designers, and students and at those electronic circuit designers who wish to apply thyristors creatively without the limitation of con sidering them as "black boxes," described only by insufficiently understood electrical ratings. The book endeavors to present an up-to-date account of the progress made in understanding the operation, potentialities, and limitations of thyristors as switching circuit elements. It assumes some basic knowledge of transistor physics and stresses the phe nomenological aspects of thyristor theory with the use of mathe matics not going beyond calculus and differential equations. The first two chapters discuss basic thyristor operation theory. The sub sequent chapters are devoted to the study of the static and dynamic properties of the SCR, the RCT, the GTO, and the triac; they in clude discussions of forward voltage drops, maximum voltage blocking capabilities, turn-on and turn-off transients, current and voltage rise rates, and desirable and undesirable triggering effects.
The Effect of Surface Orientation on Silicon Oxidation Kinetics
Author: E. A. Lewis
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.
Publisher:
ISBN:
Category :
Languages : en
Pages : 36
Book Description
It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.
Semiconductor Surface Properties in the System
Author: William Milton Gosney
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
Book Description
ULSI Process Integration III
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773768
Category : Technology & Engineering
Languages : en
Pages : 620
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773768
Category : Technology & Engineering
Languages : en
Pages : 620
Book Description
Experimental Investigations of the Electronic Properties of the Oxidized Silicon Surface Using MOS Capacitors
Author: Dean Robert Collins
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 178
Book Description
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 178
Book Description