The Structural, Optical, and Electrical Properties of RF Sputtered (Hg0 --5Cd0 25)Te Thin Films PDF Download
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Author: Philip William Diodato
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 348
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Book Description
Author: Philip William Diodato
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 348
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Book Description
Author: Teck-Shiun Lim
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Author: Bryant Coffin Bechtold
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 202
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Author: H. W. Hilou
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Haydar Mahmoud Salih
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
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During the last few years, sputtering has become a very important industrial technique for depositing thin films. Typical applications include metalization and passivation in the electronics industry, the deposition of complex cermets, glasses, and plastics, and the formation of coatings for corrosion, abrasion, and wear resistance. However, relatively little work has been reported on the growth of compound semiconducting films by sputtering.
Author: Anil Kumar Gadipelly
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659539350
Category :
Languages : en
Pages : 176
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In this book we have discussed the preparation and characterization of CdO thin films using RF reactive magnetron sputtering technique. The deposition parameters such as oxygen partial pressure, substrate temperature and film thickness are optimized for producing good quality films. Systematic characterization of as deposited and annealed films has been discussed from the crystal structure, surface morphology, film composition, optical and electrical properties. The films prepared under optimized conditions are tested for gas sensing characteristics towards ammonia gas.
Author: Sarah Eunkyung Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Author: Adithya Prakash
Publisher:
ISBN:
Category :
Languages : en
Pages : 53
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The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.
Author: Carl David Bennewitz
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 0
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