Author:
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
The Structural and Electronic Properties of Amorphous-silicon-based Alloy Materials
Author:
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
The Structural and Electronic Properties of Amorphous-silicon-based Alloy Materials
Author: D. K. Biegelsen
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 39
Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 39
Book Description
The research described in this report covers the structure and electronic properties of hydrogenated amorphous silicon and its alloys, emphasizing localized states in the gap and interface states. ESR and photoconductivity studies of prolonged illumination have led to a new model for the Staebler-Wronski effect, in which extra dangling bonds are created as a consequence of recombination. There is new evidence that the effect does not require the presence of impurities. DLTS and optical studies of gap states confirm that the dangling bond states are near mid-gap. Detailed information is presented concerning their role as recombination centers, through luminescence, ESR, and photoconductivity experiments. New localized states associated with phosphorus impurities have been observed by ESR, although their structural identity is not yet known. Time-of-flight measurements of compensated a-Si:H show that although the dangling bond density is low, compensation introduces other states near the band edges that could be boron-phosphorus complexes. Inverse photoemission has measured the conduction band density of states, identifying Si-H antibonding states and the approximate location of the mobility edge. NMR experiments find that thin films of a-Si:H have an excess hydrogen concentration and a new relaxation mechanism observed above 200K with an unknown origin. A wide variety of a-Si:H interfaces have also been studied.
Research on Electronic and Structural Properties of Amorphous-silicon-based Alloy Materials
Author:
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 0
Book Description
Properties of Amorphous Silicon and Its Alloys
Author: Tim Searle
Publisher: Institution of Electrical Engineers
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
Coverage: preparation and material quality; structural and vibrational properties; electronic structure; electronic transport recombination of excess carriers; Schottky junctions; multilayers; optical constants; mechanical and thermal properties; TFTs; solar cells; photodetectors; large area displays; LEDs; xerographic applications.
Publisher: Institution of Electrical Engineers
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
Coverage: preparation and material quality; structural and vibrational properties; electronic structure; electronic transport recombination of excess carriers; Schottky junctions; multilayers; optical constants; mechanical and thermal properties; TFTs; solar cells; photodetectors; large area displays; LEDs; xerographic applications.
Structure and Electronic Properties of Amorphous Silicon
Author: Brian N. Davidson
Publisher:
ISBN:
Category :
Languages : en
Pages : 354
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 354
Book Description
Amorphous Semiconductors
Author: Kazuo Morigaki
Publisher: John Wiley & Sons
ISBN: 1118757920
Category : Technology & Engineering
Languages : en
Pages : 286
Book Description
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
Publisher: John Wiley & Sons
ISBN: 1118757920
Category : Technology & Engineering
Languages : en
Pages : 286
Book Description
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
Amorphous Silicon and Related Materials
Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9789971506193
Category : Science
Languages : en
Pages : 742
Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Publisher: World Scientific
ISBN: 9789971506193
Category : Science
Languages : en
Pages : 742
Book Description
This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Characterization of Structural and Electronic Properties in Undoped Hydrogenated Amorphous Silicon
Author: M. Stutzmann
Publisher:
ISBN:
Category :
Languages : en
Pages : 19
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 19
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 664
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 664
Book Description