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Author: Gianfranco Pacchioni
Publisher: Springer Science & Business Media
ISBN: 9401009449
Category : Technology & Engineering
Languages : en
Pages : 619
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Book Description
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author: Gianfranco Pacchioni
Publisher: Springer Science & Business Media
ISBN: 9401009449
Category : Technology & Engineering
Languages : en
Pages : 619
Get Book Here
Book Description
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author: Roderick A.B. Devine
Publisher: Springer Science & Business Media
ISBN: 1461310318
Category : Technology & Engineering
Languages : en
Pages : 552
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Book Description
The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.
Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151
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Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 9401101094
Category : Technology & Engineering
Languages : en
Pages : 296
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Book Description
In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.
Author: David J Dumin
Publisher: World Scientific
ISBN: 981448945X
Category : Technology & Engineering
Languages : en
Pages : 281
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Book Description
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Author: Boris Ildusovich Kharisov
Publisher: CRC Press
ISBN: 1466505230
Category : Science
Languages : en
Pages : 586
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Book Description
Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material
Author: M. Pagel
Publisher: Springer Science & Business Media
ISBN: 3662040867
Category : Science
Languages : en
Pages : 518
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Book Description
An up-to-date overview of cathodoluminescence microscopy and spectroscopy in the field of geosciences, including new important data on cathodoluminescence spectroscopy, physical parameters and systematic spectral analysis of doped minerals. Each chapter, written by a well-known specialist, covers classic and new fields of application such as carbonate diagenesis, silicates, brittle deformation in sandstones, gemstone recognition, biomineralization, economic geology or geochronology. Useful to all scientists, graduates and professional engineers throughout the geosciences community.
Author: Alexander Pechenik
Publisher: Topics in Physical Chemistry
ISBN: 0195120507
Category : Computers
Languages : en
Pages : 540
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Book Description
High-temperature materials is a fast-moving research area with numerous practical applications. Materials that can withstand extremely high temperatures and extreme environments are generating considerable attention worldwide; however, designing materials that have low densities, elevated melting temperatures, oxidation resistance, creep resistance, and intrinsic toughness encompass some of the most challenging problems in materials science. The current search for high-temperature materials is largely based on traditional, trial-and-error experimental methods which are costly and time-consuming. An effective way to accelerate research in this field is to use recent advances in materials simulations and high performance computing and communications (HPCC) to guide experiments. This synergy between experiment and advanced materials modeling will significantly enhance the synthesis of novel high-temperature materials. This volume collects recent work from experimental and computational scientists on high-temperature materials and emphasizes the potential for collaboration. It features state-of-the-art materials modeling and recent experimental developments in high-temperature materials. Topics include fundamental phenomena and properties; measurements and modeling of interfacial phenomena, stresses, growth of defects, strain, and fracture; and electronic structure and molecular dynamics.
Author: Rozaliya I. Barabash
Publisher: Momentum Press
ISBN: 1606500007
Category : Science
Languages : en
Pages : 444
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Book Description
Annotation Beginning with a concise review of the physics and chemistry of polymers and their structure and morphology, this book goes on to describe and explain the common methods of characterizing polymers, including optical microscopy, scanning electron microscopy and transmission electron microscopy, among others. Also covered are the characterization and modification of such surface properties as adhesion, wetting, tribology, and surface thermodynamics.
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
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Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
