The Photo-induced Deposition of Silicon and Germanium on Silicon (111) and the Effects of Germanium and Phosphorus on the Desorption of Hydrogen from Silicon (111) PDF Download
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Author: Gregory Batinica
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Category :
Languages : en
Pages : 402
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Author: Gregory Batinica
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ISBN:
Category :
Languages : en
Pages : 402
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Category : Dissertations, Academic
Languages : en
Pages : 704
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Author:
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Category : Nuclear energy
Languages : en
Pages : 654
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NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Author:
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Category : Physics
Languages : en
Pages : 1420
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Author:
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Category : Electrical engineering
Languages : en
Pages : 2092
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Author: American Ceramic Society
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Category : Ceramics
Languages : en
Pages : 1150
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Author: Bell Telephone Laboratories, inc. Technical Information Libraries
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Category : Physics
Languages : en
Pages : 622
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Author: Avinash Kumar Agarwal
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Category :
Languages : en
Pages :
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This research project examines the fundamental issues associated with UV/ozone induced oxidation of Si$sb{rm 1-x}$Ge$sb{rm x}$ alloys and thermal desorption of the oxide film. A low temperature technique has been demonstrated for cleaning Ge wafer surfaces for the growth of high quality epitaxial films. Using x-ray photoelectron spectroscopy (XPS) and other techniques, it is shown that 30 min exposures of a degreased and deionized-water-rinsed Ge wafer to ultraviolet (UV) emission from a Hg lamp in laboratory air is sufficient to remove C contamination and form a non-permeable passive amorphous GeO$sb2$ layer with a thickness of $sim$3 nm. Subsequent annealing in ultrahigh vacuum (UHV) at $>$400$spcirc$C resulted in desorption of the oxide layer leaving behind a clean well-ordered Ge surface with no C or O impurities. Si$sb{rm 1-x}$Ge$sb{rm x}$ alloy films with different Ge fractions, grown epitaxially by molecular beam epitaxy (MBE) on Si (111) substrates, were oxidized by exposure to UV-ozone for different times. This resulted in the growth of a uniform oxide film containing both Si and Ge in the +4 state. The oxide thickness initially increased rapidly but reached a saturation value. This varied from 1.3 to 3 nm for Ge fractions of 0 to 100% in the semiconductor alloy. This behavior is consistent with the existence of a space charge region resulting from photo-excitation of electrons from the SiGe valence band into the oxide. The photoelectrons assist in ionizing surface oxygen, a critical step in the oxidation reaction. The desorption kinetics of the GeO$sb2$ film was studied using temperature programmed desorption (TPD) and isothermal annealing in the XPS instrument. The desorption took place over a narrow temperature span $
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Category : Nuclear energy
Languages : en
Pages : 748
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Author: Bell Telephone Laboratories. Libraries and Information Systems Center
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Category : Electrical engineering
Languages : en
Pages : 606
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