The Metal-organic Chemical Vapor Deposition and Properties of III-V Antimony-based Semiconductor Materials PDF Download
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Author: Robert M. Biefeld
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
Author: Robert M. Biefeld
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
Author: Robert M. Biefeld
Publisher:
ISBN:
Category :
Languages : en
Pages : 38
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: R.J. Malik
Publisher: Elsevier
ISBN: 0444596356
Category : Technology & Engineering
Languages : en
Pages : 740
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Book Description
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Author: Pamela Kay York
Publisher:
ISBN:
Category :
Languages : en
Pages : 268
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 111931304X
Category : Technology & Engineering
Languages : en
Pages : 584
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Fabian I. Ezema
Publisher: Springer Nature
ISBN: 3030684628
Category : Technology & Engineering
Languages : en
Pages : 926
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Book Description
This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.
Author: Oleg G. Okhotnikov
Publisher: John Wiley & Sons
ISBN: 9783527630400
Category : Science
Languages : en
Pages : 330
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Book Description
This timely publication presents a review of the most recent developments in the field of Semiconductor Disk Lasers. Covering a wide range of key topics, such as operating principles, thermal management, nonlinear frequency conversion, semiconductor materials, short pulse generation, electrical pumping, and laser applications, the book provides readers with a comprehensive account of the fundamentals and latest advances in this rich and diverse field. In so doing, it brings together contributions from world experts at major collaborative research centers in Europe and the USA. Each chapter includes a tutorial style introduction to the selected topic suitable for postgraduate students and scientists with a basic background in optics - making it of interest to a wide range of scientists, researchers, engineers and physicists working and interested in this rapidly developing field. It will also serve as additional reading for students in the field.
Author: Anthony C. Jones
Publisher: Wiley-VCH
ISBN:
Category : Science
Languages : en
Pages : 360
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Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This text details the deposition methods available for different materials aiming to make the chemistry of deposition accessible to the materials scientist.
Author: Kevin P. Bassett
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.
