The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy

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Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures

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Scientific and Technical Aerospace Reports

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Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors

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Characterization, Modeling and Fabrication of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors

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Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors

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Molecular-beam Epitaxial Growth and Characterization of Pseudomorphic Double Modulation-doped Field Effect Transistor Structures on Gallium Arsenide

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The Fabrication of Double Heterojunction Aluminum Gallium Arsenide/gallium Arsenide Bipolar Transistors by Molecular Beam Epitaxy

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Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide/gallium Arsenide and Indium Aluminum Arsenide/indium Gallium Arsenide Heterojunction Bipolar Transistors

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Chemical Abstracts

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