The Effects of Ionizing Radiation on Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download The Effects of Ionizing Radiation on Transistors PDF full book. Access full book title The Effects of Ionizing Radiation on Transistors by Daniel Paul Peletier. Download full books in PDF and EPUB format.
Author: Daniel Paul Peletier
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
Get Book Here
Book Description
An experiment, in which 15 npn bipolar silicon transistors were exposed to Co60 gamma radiation, is described. The known theory concerning the radiation damage of transistors is presented. In addition, the distinguishing characteristics of ionizing radiation damage are discussed, and a method of estimating bulk damage is developed. During the experiment, the following transistor parameters were measured: AC and DC common emitter current gain, collector-to-base leakage current, gain-bandwidth product, and base spreading resistance. The damage curves for leakage current and AC and DC common emitter current gain are plotted and discussed. The relation between transistor parameter degradation and bias current is investigated by dividing the transistors into three equal groups and biasing them at three different collector levels during irradiation. The recovery of leakage current is plotted and an exponential curve fitted to the data. Recovery time of current gain is qualitatively observed. Data indicate that in some transistors damage to leakage current peaks near an accumulated radiation dose of 100,000 rad. The value of this peak is as large as 300 times the final damage value. The recovery time constant of leakage current damage is less than 15 minutes for the transistors tested. (Author).
Author: Daniel Paul Peletier
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
Get Book Here
Book Description
An experiment, in which 15 npn bipolar silicon transistors were exposed to Co60 gamma radiation, is described. The known theory concerning the radiation damage of transistors is presented. In addition, the distinguishing characteristics of ionizing radiation damage are discussed, and a method of estimating bulk damage is developed. During the experiment, the following transistor parameters were measured: AC and DC common emitter current gain, collector-to-base leakage current, gain-bandwidth product, and base spreading resistance. The damage curves for leakage current and AC and DC common emitter current gain are plotted and discussed. The relation between transistor parameter degradation and bias current is investigated by dividing the transistors into three equal groups and biasing them at three different collector levels during irradiation. The recovery of leakage current is plotted and an exponential curve fitted to the data. Recovery time of current gain is qualitatively observed. Data indicate that in some transistors damage to leakage current peaks near an accumulated radiation dose of 100,000 rad. The value of this peak is as large as 300 times the final damage value. The recovery time constant of leakage current damage is less than 15 minutes for the transistors tested. (Author).
Author: D. L. Nelson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 28
Get Book Here
Book Description
Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Author: T. P. Ma
Publisher: John Wiley & Sons
ISBN: 9780471848936
Category : Technology & Engineering
Languages : en
Pages : 616
Get Book Here
Book Description
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Author: Marta Bagatin
Publisher: CRC Press
ISBN: 1498722636
Category : Technology & Engineering
Languages : en
Pages : 394
Get Book Here
Book Description
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Author: George Messenger
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 984
Get Book Here
Book Description
Author: Frank Larin
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 312
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 258
Get Book Here
Book Description
Author: Ronald D Schrimpf
Publisher: World Scientific
ISBN: 9814482153
Category : Technology & Engineering
Languages : en
Pages : 349
Get Book Here
Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Author: Yabin Sun
Publisher: Springer
ISBN: 9811046123
Category : Technology & Engineering
Languages : en
Pages : 187
Get Book Here
Book Description
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Author: Timothy R. Oldham
Publisher: World Scientific
ISBN: 9789810233266
Category : Technology & Engineering
Languages : en
Pages : 192
Get Book Here
Book Description
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
