The Development of the Electrically Controlled High Power RF Switch and Its Application to Active FF Pulse Compression Systems PDF Download
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Author: Jiquan Guo
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
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Book Description
Author: Jiquan Guo
Publisher:
ISBN:
Category :
Languages : en
Pages : 156
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 147
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Book Description
In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.
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Languages : en
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A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.
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Languages : en
Pages :
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In this paper, we will present our recent results on the research of the ultra-fast high power RF switches based on silicon. We have developed a switch module at X-band which can use a silicon window as the switch. The switching is realized by generation of carriers in the bulk silicon. The carriers can be generated electrically or/and optically. The electrically controlled switches use PIN diodes to inject carrier. We have built the PIN diode switches at X-band, with
Author:
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Category :
Languages : en
Pages : 5
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Book Description
We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.
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Languages : en
Pages :
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First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.
Author: J. Guo
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
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Book Description
In this paper, we present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity SOI (silicon on oxide) wafer. The wafer is inserted into a cylindrical waveguide under TE01 mode, performing switching by injecting carriers into the bulk silicon. Our current design use a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). This design is able to achieve sub-100ns switching time, while the switching speed can be improved further with 3-D device structure and faster circuit. Power handling capacity of the switch is at the level of 10MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies such as L-band.
Author:
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Category :
Languages : en
Pages : 50
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Book Description
The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability.
Author: S. Tantawi
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.
Author: Ihor Vitkovitsky
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Very Good,No Highlights or Markup,all pages are intact.
