The Design, Growth, and Characterization of Antimonide-based Composite-channel Heterostructure Field-effect Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download The Design, Growth, and Characterization of Antimonide-based Composite-channel Heterostructure Field-effect Transistors PDF full book. Access full book title The Design, Growth, and Characterization of Antimonide-based Composite-channel Heterostructure Field-effect Transistors by Heng-kuang Lin. Download full books in PDF and EPUB format.
Author: Heng-kuang Lin
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Heng-kuang Lin
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Colombo Rodolphe Bolognesi
Publisher:
ISBN:
Category :
Languages : en
Pages : 424
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Barbara E. Landini
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 440
Get Book Here
Book Description
Author: Luke W. Guo
Publisher:
ISBN:
Category :
Languages : en
Pages : 57
Get Book Here
Book Description
For decades, the scaling of silicon CMOS has brought impressive growth to the semiconductor industry, as well as a wealth of technological innovations. However, the continued scaling of CMOS devices to the nanometer regime is now threatened by intrinsic limitations to the use of silicon as the channel material. Hence, there is a strong interest in III-V semiconductor materials to replace silicon as the channel material as a result of their outstanding electron transport properties. While III-V materials have demonstrated impressive n-channel field-effect transistors (FETs), the same success has not yet been translated to the development of a high-performance III-V pchannel FET. This is because while many III-V's have high electron mobilities, they generally have very poor hole mobilities. The development of a high-performance III-V p-channel FET is critical to the realization of a future-generation III-V CMOS architecture. Among the III-Vs, the antimonides have the highest hole mobilities. This makes them attractive for developing a 111-V p-channel FET. This thesis examines the use of process-induced uniaxial strain combined with biaxial strain introduced during growth of the heterostructure as an approach to enhance antimonide-based FETs. Using a compressively stressed silicon nitride layer to induce uniaxial strain in the device, stressed devices with an InGaSb channel were fabricated and compared with unstressed devices processed in parallel. Enhancements of >50% in the intrinsic transconductance were observed as well as reductions of >30% in the source-drain resistance. This work illustrates the effectiveness of uniaxial strain in improving the performance of antimonide FETs.
Author: Andrew Taiann Ping
Publisher:
ISBN:
Category :
Languages : en
Pages : 202
Get Book Here
Book Description
Author: Daniel Gerard Ballegeer
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 378
Get Book Here
Book Description
Author: Bravishma Narayan
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages :
Get Book Here
Book Description
This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN HFETs in the past have been high material defect density and non-optimized fabrication technologies which gives rise to bu er leakage and surface leakage, respectively. In this thesis, mesa isolation, ohmic and gate metal contacts, and passivation techniques, have been discussed to improve the performance of these power transistors in terms of low contact resistance and low gate leakage. The relationship between breakdown voltage and Rds(ON)A with respect to the gate-drain length (Lgd) is also discussed. First, unit cell devices were designed (two-fingered cells with Wg = 100, 300, 400 m) and characterized, and then they were extended to form large area devices (upto Wg = 40 mm). The design goals were classied into three parts: : - High Breakdown Voltage: This was achieved by designing devices with variations in Lgd,
Author: D. N. Buckley
Publisher: The Electrochemical Society
ISBN: 9781566774079
Category : Technology & Engineering
Languages : en
Pages : 302
Get Book Here
Book Description
