The Creation and Transport of Spin-polarized Carriers in Semiconductor Heterostructures PDF Download
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Author: James Patrick McGuire
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
Author: James Patrick McGuire
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 1439803781
Category : Science
Languages : en
Pages : 797
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Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784376
Category : Science
Languages : en
Pages : 497
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Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Author: Abdel Isakovic
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Book Description
Author: Weimin Chen
Publisher: CRC Press
ISBN: 042953373X
Category : Technology & Engineering
Languages : en
Pages : 348
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Book Description
This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Author: Karl W. Böer
Publisher: Springer Nature
ISBN: 3031182863
Category : Technology & Engineering
Languages : en
Pages : 1408
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Book Description
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Author: Jan A. Gaj
Publisher: Springer Science & Business Media
ISBN: 3642158560
Category : Science
Languages : en
Pages : 484
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Book Description
As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.
Author: D.D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 366205003X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor "quantum devices," a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor "spintronics" (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.
Author: Supriyo Bandyopadhyay
Publisher: World Scientific
ISBN: 1783263563
Category :
Languages : en
Pages : 316
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Book Description
The conference will cover various aspects of the science and engineering of devices, circuits and systems that exploit mesoscopic or quantum-mechanical phenomena in their operation. This conference will be the first to bring together experts from the device and circuits fields. It is intended to promote interaction between physicists, molecular chemists, engineers and computer scientists who all have a role to play in the development of the next generation of electronics.
Author: Fumihiro Matsukura
Publisher: Elsevier Inc. Chapters
ISBN: 0128086815
Category : Science
Languages : en
Pages : 56
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Book Description
III–V compound semiconductors such as GaAs and InAs alloyed with Mn exhibit ferromagnetism. The magnetic, electrical, and optical properties of ferromagnetic III–V semiconductors are first compiled along with the way to prepare the epitaxial films and the effect of postgrowth annealing. Theories available to explain the magnetism in these alloys are then presented. Because the ferromagnetic semiconductors are compatible with epitaxial III–V heterostructures, a number of device structures have been examined and shown to reveal a wide variety of phenomena that either cannot be realized or are very difficult to observe in ferromagnetic metal structures. The unique properties revealed by ferromagnetic semiconductor structures, ranging from reversible electric field control of ferromagnetic phase transition to generating velocity versus current-density curves of current-induced domain wall motion, are then reviewed. The prospect of realizing high-transition temperature is discussed in the last section.
