Synthesis of Compound Semiconducting Materials and Device Applications; Gallium Nitride Light Emitting Diodes PDF Download
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Author: Stanford University. Center for Materials Research
Publisher:
ISBN:
Category :
Languages : en
Pages : 222
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Book Description
The synthesis and characterization of hetero-epitaxial gallium nitride (GaN) films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light-emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping. (Modified author abstract).
Author: Stanford University. Center for Materials Research
Publisher:
ISBN:
Category :
Languages : en
Pages : 222
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Book Description
The synthesis and characterization of hetero-epitaxial gallium nitride (GaN) films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light-emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping. (Modified author abstract).
Author: STANFORD UNIV CALIF CENTER FOR MATERIALS RESEARCH.
Publisher:
ISBN:
Category :
Languages : en
Pages : 252
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Book Description
;Contents: Epitaxial crystal growth; Device applications of GaAs; Relations between dislocations and mechanical properties and the production and characterization of defect structures in compound semiconductors; Scientific aspects of gallium arsenide crystal preparation; The synthesis, characterization and device application of gallium nitride: preparation of GaN light-emitting diodes.
Author: James H. Edgar
Publisher: Institution of Electrical Engineers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 692
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Book Description
Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author: Farid Medjdoub
Publisher: CRC Press
ISBN: 1482220040
Category : Technology & Engineering
Languages : en
Pages : 372
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Book Description
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: Marko Tadjer
Publisher: Woodhead Publishing
ISBN: 0128211059
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
Author: Rüdiger Quay
Publisher: Springer Science & Business Media
ISBN: 3540718923
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477
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Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 1846283590
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
