Synthesis, Electrical and Optical Characterization of Semiconductor Nanowires PDF Download
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Author: Xianwei Zhao
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
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Book Description
Abstract: Over the past 15 years, nanowires (NWs) and nanotubes have drawn great attention since the application of VLS growth mechanism into the synthesis of one dimensional structures. Semiconductor nanowires exhibit novel electrical and optical properties. With a broad selection of composition and band structures, these one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications. To fully exploit these one-dimensional nanostructures, current research has focused on synthetic control of one-dimensional nanoscale building blocks, characterization of their novel properties, device fabrication based on nanowire building blocks, and integration of nanowire elements into complex functional architectures. Progress has been made in past two decades. However, there are still challenges in NWs growth controls, such as size, shape, position, stoichiometry and defects. Due to the dimensionality and possible quantum confinement effects of nanowires, there are also challenges in characterization and device fabrication. A systematic study of controlled growth of nanowires has been conducted in this dissertation. The first part of this dissertation presents various synthesis techniques of semiconductor nanowires via metal catalyzed vapor-liquid-solid (VLS) growth mechanism. Pulse laser deposition (PLD) with arsenic over pressure method has been successfully utilized for GaAs nanowires. Challenges such as uniformity issue commonly seen in MOCVD and MBE systems, morphology and stoichiometry issues commonly seen in conventional PLD systems have been overcome. Si nanowires fabrication via ultrahigh vacuum magnetron sputtering has reported for the first time, which also provides an alternate route for Si nanowires synthesis. The second part of this dissertation discusses optical properties of ensemble direct band gap nanowires. Photoluminescence spectra have been measured on an ensemble of random orientated InP nanowires. Polarization anisotropy has been explored on ensemble nanowires and oxide-coated nanowires. Our calculation for randomly oriented nanowires agrees well with experimental results. The control of polarization anisotropy of nanowires is realized by coating nanowires with an oxide layer composed of matching dielectric constant media. This opens a path to optical spin injection and detection on direct band gap nanowires.
Author: Xianwei Zhao
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
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Book Description
Abstract: Over the past 15 years, nanowires (NWs) and nanotubes have drawn great attention since the application of VLS growth mechanism into the synthesis of one dimensional structures. Semiconductor nanowires exhibit novel electrical and optical properties. With a broad selection of composition and band structures, these one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications. To fully exploit these one-dimensional nanostructures, current research has focused on synthetic control of one-dimensional nanoscale building blocks, characterization of their novel properties, device fabrication based on nanowire building blocks, and integration of nanowire elements into complex functional architectures. Progress has been made in past two decades. However, there are still challenges in NWs growth controls, such as size, shape, position, stoichiometry and defects. Due to the dimensionality and possible quantum confinement effects of nanowires, there are also challenges in characterization and device fabrication. A systematic study of controlled growth of nanowires has been conducted in this dissertation. The first part of this dissertation presents various synthesis techniques of semiconductor nanowires via metal catalyzed vapor-liquid-solid (VLS) growth mechanism. Pulse laser deposition (PLD) with arsenic over pressure method has been successfully utilized for GaAs nanowires. Challenges such as uniformity issue commonly seen in MOCVD and MBE systems, morphology and stoichiometry issues commonly seen in conventional PLD systems have been overcome. Si nanowires fabrication via ultrahigh vacuum magnetron sputtering has reported for the first time, which also provides an alternate route for Si nanowires synthesis. The second part of this dissertation discusses optical properties of ensemble direct band gap nanowires. Photoluminescence spectra have been measured on an ensemble of random orientated InP nanowires. Polarization anisotropy has been explored on ensemble nanowires and oxide-coated nanowires. Our calculation for randomly oriented nanowires agrees well with experimental results. The control of polarization anisotropy of nanowires is realized by coating nanowires with an oxide layer composed of matching dielectric constant media. This opens a path to optical spin injection and detection on direct band gap nanowires.
Author: Lorenzo Rigutti
Publisher: Elsevier Inc. Chapters
ISBN: 0128083484
Category : Science
Languages : en
Pages : 67
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Book Description
Author: J Arbiol
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573
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Book Description
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Author: Ruixuan Gao
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Second, I will discuss the synthesis of tapered nanowire structures and their electrical and optical characterization. By finely tuning growth temperature, precursor partial pressure, and catalyst size, detailed control of the nanowire tapering angle can be achieved. Moreover, tapered core/shell nanowires can be configured into devices with highly-localized electrical and optical functionalities. I show that control of the tapering angle plays an important role in determining the electrical and optical properties of nanowires.
Author: Talin Ayvazian
Publisher:
ISBN: 9781303305825
Category :
Languages : en
Pages : 107
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Book Description
This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl2 in methanol- a grain growth promoter. The influence of CdCl 2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility ([mu] [subcript] eff) by an order of magnitude and increase of the Ion/Ioff ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 [mu]m to less than 1 [mu]m which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x 4 h to 450 °C x1h enhanced grain growth confirmed by structural characterization including X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Raman Spectroscopy. Correspondingly the light emission intensity and EQE improved due to this grain growth. Kelvin probe force microscopy (KPFM) was utilized to understand mechanism of light emission in CdSe nanowires. Arrays of CdTe nanowires were electrodeposited using LPNE process where the elec- trodeposition of pc-CdTe was carried out at two temperatures: 20 °C (cold) and 55 °C (hot). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) re- sults revealed higher crystallinity, larger grain size and presence of Te for nanowires prepared at 55 °C compared to nanowires deposited at 20 °C. Nanowires prepared at 55 °C showed higher electrical conductivity and enhanced electroluminescence proper- ties, including higher light emission intensity and improved External Quantum Efficiency (EQE). Electrical conduction mechanism also investigated for CdTe nanowires. Thermionic emission over schottky barrier height was identified as the dominant charge transport mechanism in pc-CdTe nanowires.
Author: Jie Xiang
Publisher: Royal Society of Chemistry
ISBN: 1849738157
Category : Science
Languages : en
Pages : 463
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Book Description
A timely reference from leading experts on semiconductor nanowires and their applications.
Author: Victor I. Klimov
Publisher: CRC Press
ISBN: 0203913264
Category : Science
Languages : en
Pages : 505
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Book Description
The vast technological potential of nanocrystalline materials, as well as current intense interest in the physics and chemistry of nanoscale phenomena, has led to explosive growth in research on semiconductor nanocrystals, also known as nanocrystal quantum dots, and metal nanoparticles. Semiconductor and Metal Nanocrystals addresses current topics impacting the field including synthesis and assembly of nanocrystals, theory and spectroscopy of interband and intraband optical transitions, single-nanocrystal optical and tunneling spectroscopies, electrical transport in nanocrystal assemblies, and physical and engineering aspects of nanocrystal-based devices. Written by experts who have contributed pioneering research, this reference comprises key advances in the field of semiconductor nanocrystal quantum dots and metal nanoparticles over the past several years. Focusing specifically on nanocrystals generated through chemical techniques, Semiconductor and Metal Nanocrystals Merges investigative frontiers in physics, chemistry, and engineering Documents advances in nanocrystal synthesis and assembly Explores the theory of electronic excitations in nanoscale particles Presents comprehensive information on optical spectroscopy of interband and intraband optical transitions Reviews data on single-nanocrystal optical and tunneling spectroscopies Weighs controversies related to carrier relaxation dynamics in ultrasmall nanoparticles Discusses charge carrier transport in nanocrystal assemblies Provides examples of lasing and photovoltaic nanocrystal-based devices Semiconductor and Metal Nanocrystals is a must read for scientists, engineers, and upper-level undergraduate and graduate students interested in the physics and chemistry of nanoscale semiconductor and metal particles, as well as general nanoscale science.
Author: Zhong Lin Wang
Publisher: Springer Science & Business Media
ISBN: 0387287450
Category : Technology & Engineering
Languages : en
Pages : 482
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Book Description
Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires.
Author: Luke J. Wilson
Publisher: Nova Science Publishers
ISBN: 9781631178559
Category : Nanowires
Languages : en
Pages : 0
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Book Description
Zinc Oxide (ZnO) is a metal oxide semiconductor of group II-IV whose nature resides at the borderline between covalent and ionic semiconductors. In the last decade it has raised several attention in the research field since it possesses promising catalytic, electrical, electronic and optical properties. It can be easily prepared in different shapes and sizes at both the micrometric and nanometric scale, including the forms of micro- and nanowires, nanobelts, nanotubes, micro- and nanoparticles, multipods, tetrapods, and flower-like microstructures. This different variety of morphologies has thus attracted considerable attention for potential application in solar cells, nanogenerators, field effect transistors, gas sensors and other electronic micro- and nanodevices. This book discusses the synthesis and the electrical properties of ZnO nanowires. It also discusses rough silver nanowires, nanobuds and nanoparticle substrates; the synthesis and properties of Ni nanowires in porous silicon templates; and phonon scattering and elastic energy propagation in nanowires.
Author: Gregory Stephen Doerk
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
Silicon's chemical stability, high natural abundance (as the second most common element in the earth's crust), mechanical stiffness, and semiconducting behavior have made it the subject of extensive scientific investigation and the material of choice for both the microelectronics and microelectromechanical device industries. The success of Moore's Law that demands continual size reduction has directed it to a central place in emerging nanoscience and nanotechnology as well. Crystalline nanowires (NWs) are one nanostructured form that silicon may take that has sparked significant interest as they can exhibit considerable confinement effects and high surface-to-volume ratios, but may be interfaced simply along one direction for the determination of material properties and implementation into new technologies. The expense and difficulty involved in the creation of semiconductor nanowires using the "top down" fabrication techniques of the microelectronics industry has promoted an explosion of chemical synthetic "bottom up" techniques to produce high quality crystalline nanowires in large quanitities. Nevertheless, bottom up synthesized Si NWs retain a new set of challenges for their successful integration into reliable, high-performance devices, which is hindered by an incomplete understanding of the factors controlling their material properties. The first chapter of this dissertation introduces the motivation for studying semiconductor NWs and the benefits of limiting the scope to silicon alone. A brief survey of the current understanding of thermal conductivity in silicon nanowires provides prime examples of how confinement effects and surface morphology may dramatically alter nanowire properties from their bulk crystal counterparts. The particular challenges to bottom up silicon nanowire device integration and characterization are noted, especially related to Si nanowires that are grown epitaxially on crystal silicon substrates, and Raman spectroscopy is introduced as a promising optical characterization and metrology tool for semiconductor nanowire based devices. Chapter two describes the vapor-liquid-solid (VLS) mechanism for the synthesis of very high quality, single-crystal silicon nanowires using Au and Pt catalyst nanoparticles. A new technique is presented for the simplified synthesis of branched silicon nanowires based on the migration of Au catalyst during an hydrogen anneal intermediate between growth stages, and the faceting behavior at synthetic stages is revealed by the analysis of electron microscope images. Synthesis of solid and porous Si nanowires based on Ag mediated electrochemical silicon etching is described as well. The third chapter specifies new processing techniques developed with future device integration of epitaxially VLS-grown Si nanowires in mind. Epitaxially bridging nanowires are shown to provide an excellent platform for single-wire electrical and mechanical property measurements. Galvanic displacement through block copolymer micelle/homopolymer surface templates is demonstrated as a means to deposit catalyst nanoparticles with controlled sizes and areal densities in a variety of geometries and with registration to photolithographic patterns. Ex situ boron doping by the direct hydrogen reduction of boron tribromide is shown to achieve active concentrations exceeding 1019 cm-3 with high axial uniformity, while avoiding the adverse impact on nanowire morphology that is often observed with in situ boron doping of silicon nanowires. Chapter four describes the characteristics of Raman spectroscopy that are relevant to studying individual semiconductor nanowires. Careful spectral measurements show that the anharmonic dependence of Raman spectra on temperature for individual Si nanowires remains unchanged from the bulk crystal for diameters down to 30 nm, regardless of surface morphology. Using this result, a new technique for measuring the thermal conductivity of individual semiconductor nanowires is then outlined based on Raman thermal mapping of individual cantilevered nanowires. Finally, the dissertation is concluded with suggestions for possible future experiments. One avenue is to probe more deeply the morphology of faceted silicon nanowires and nanotrees and its impact on their transport physics. Another possible route for further study would be to explore new characterization and metrological applications of Raman spectrocopy for semiconductor nanowires.
