Structural and Electrical Properties of Barium Strontium Titanate Thin Films for Tunable Microwave Applications PDF Download
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Author: Sriraj G. Manavalan
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Languages : en
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ABSTRACT: The dependence of dielectric permittivity on the applied electric field, high dielectric constant and low cost makes barium strontium titanate (BST) a promising ferroelectric material for applications in tunable microwave devices. High tunability and low dielectric loss is desired for tunable microwave devices. The primary objective of this research was to optimize the tunability and dielectric loss of BST thin films at microwave frequencies with different deposition techniques. Ba0.5Sr0.5TiO3 thin films were grown on Pt/TiO2/SiO2/Si, by pulsed laser deposition (PLD) and sputtering. Parallel plate capacitor structures were designed using ADS and fabricated. The microstructural and phase analysis of the BST films were performed using X-ray diffraction (XRD) method. The diffraction patterns are attributed to cubic (perovskite) crystal system. The analysis of surface morphology was done using atomic force microscopy.
Author: Sriraj G. Manavalan
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Languages : en
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ABSTRACT: The dependence of dielectric permittivity on the applied electric field, high dielectric constant and low cost makes barium strontium titanate (BST) a promising ferroelectric material for applications in tunable microwave devices. High tunability and low dielectric loss is desired for tunable microwave devices. The primary objective of this research was to optimize the tunability and dielectric loss of BST thin films at microwave frequencies with different deposition techniques. Ba0.5Sr0.5TiO3 thin films were grown on Pt/TiO2/SiO2/Si, by pulsed laser deposition (PLD) and sputtering. Parallel plate capacitor structures were designed using ADS and fabricated. The microstructural and phase analysis of the BST films were performed using X-ray diffraction (XRD) method. The diffraction patterns are attributed to cubic (perovskite) crystal system. The analysis of surface morphology was done using atomic force microscopy.
Author: Bo Xiao
Publisher:
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Category : Ferroelectric devices
Languages : en
Pages :
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Ferroelectric materials have been extensively studied theoretically and experimentally for many decades. Their ferroelectric, piezoelectric, pyroelectric, dielectric and electro-optical properties offer great promise in various applications such as non-volatile random access memory devices, non linear optics, motion and thermal sensors, and tunable microwave devices. Advanced applications for high dielectric constant insulators and nonvolatile memories in semiconductor industry have led to a meteoric rise of interest in the ferroelectrics recently. As most studied and technically important ferroelectric materials, lead zirconate titanate (PZT) and barium strontium titanate (BST) are widely investigated to understand their properties for potential device applications. Using radio frequency magnetron sputtering, single crystalline PZT and BST thin films have been achieved on SrTiO3 substrates, and been characterized for their structural and electrical properties. Eyeing their different potential applications, ferroelectric, pyroelectric and dielectric properties of PZT and BST thin films were studied. In addition, the introduction of bridge layers (nucleation or buffer layers) grown by molecular beam epitaxy (MBE) has been employed to facilitate the heterostructure growth of PZT thin films on GaN and BST thin films on sapphire substrates. Highly (111)-oriented perovskite PZT thin films were achieved on silicon-doped GaN (0001)/c-sapphire with a PbTiO3/PbO oxide bridge layer. And (001)-oriented BST thin films were grown on a-plane sapphire with an MgO/ZnO bridge layer. This dissertation also discusses the realization of PZT ferroelectric field effect transistors (FeFET). Two different 1T FeFET structures were successfully fabricated and their electrical properties were examined. Ferroelectric behavior was observed in the plot of source-drain current versus gate voltage where it exhibited a large counterclockwise hysteresis with 50% current modulation.
Author: Venkataramanan Gurumurthy
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Languages : en
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ABSTRACT: The composition-dependent Curie temperature and bias-dependant dielectric permittivity of Barium Strontium Titanate (BST) makes it very attractive for tunable application in the RF/Microwave regime. In this research work, the performance of BST varactors fabricated on the conventional Pt/Ti/SiO2/Si bottom electrode stack were compared with those fabricated using chemical vapor deposited Nanocrystalline Diamond (NCD) as the diffusion barrier layer instead of SiO2. The varactors fabricated on NCD films displayed much better symmetry in capacitance-voltage behavior and better overall quality factors than varactors fabricated on SiO2. The improvement in performance can be attributed to existence of stable interfaces in the devices fabricated on NCD which reduced the bottom electrode losses at high frequencies. The SiO2 based BST varactors on the other hand displayed better reliability and breakdown fields. The main purpose of this research work is to develop a robust Metal Insulator Metal (MIM) structure to achieve better all round performance of BST varactors. In the second part of this research work, the prospect of developing diamond based layered Surface Acoustic Wave (SAW) devices using Ba0.8Sr0.2TiO3 as the piezoelectric layer is investigated. Structural characterization of BST thin films deposited on Si/NCD/Pt and Si/SiO2/Ti/Pt stack were performed using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM). Cross-sectional studies on the two stacks were performed using Scanning Electron Microscopy (SEM). X-Ray Mapping (XRM) was then done to ascertain the quality of the interfaces and to check for interdiffusion between layers. MIM structures in the Coplanar Waveguide (CPW) configuration were fabricated using conventional lithography and etching techniques for high frequency measurements. The performance of the fabricated varactors was characterized from 100 MHz to 1 GHz. For the SAW application, structural characterization of Ba0.8Sr0.2TiO3 on Chemical Vapor Deposited (CVD) diamond was done and the deposition procedure was optimized to obtain thick BST films. SAW bandpass filters and resonators were designed wherein the device geometry was varied over a wide range in order to characterize the variation in device performance with geometry. Finally interdigital capacitor structures were fabricated and used for conducting Curie temperature measurements on the deposited BST films in order to determine the operation range of the deposited BST films.
Author: Mrityunjay Singh
Publisher: John Wiley & Sons
ISBN: 0470391227
Category : Technology & Engineering
Languages : en
Pages : 830
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Book Description
This book joins and integrates ceramics and ceramic-based materials in various sectors of technology. A major imperative is to extract scientific information on joining and integration response of real, as well as model, material systems currently in a developmental stage. This book envisions integration in its broadest sense as a fundamental enabling technology at multiple length scales that span the macro, millimeter, micrometer and nanometer ranges. Consequently, the book addresses integration issues in such diverse areas as space power and propulsion, thermoelectric power generation, solar energy, micro-electro-mechanical systems (MEMS), solid oxide fuel cells (SOFC), multi-chip modules, prosthetic devices, and implanted biosensors and stimulators. The engineering challenge of designing and manufacturing complex structural, functional, and smart components and devices for the above applications from smaller, geometrically simpler units requires innovative development of new integration technology and skillful adaptation of existing technology.
Author: Qizheng Gu
Publisher: Springer
ISBN: 3319099248
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
This book serves as a hands-on guide to RF tunable devices, circuits and subsystems. An innovative of modeling for tunable devices and networks is described, along with a new tuning algorithm, adaptive matching network control approach, and novel filter frequency automatic control loop. The author provides readers with the necessary background and methods for designing and developing tunable RF networks/circuits and tunable RF font-ends, with an emphasis on applications to cellular communications.
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Languages : en
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Barium titanate and barium strontium titanate thin films were deposited on base metal foils via chemical solution deposition and radio frequency magnetron sputtering. The films were processed at elevated temperatures for densification and crystallization. Two unifying research goals underpin all experiments: 1) To improve our fundamental understanding of complex oxide processing science, and 2) to translate those improvements into materials with superior structural and electrical properties. The relationships linking dielectric response, grain size, and thermal budget for sputtered barium strontium titanate were illustrated. (Ba0.6Sr0.4)TiO3 films were sputtered on nickel foils at temperatures ranging between 100-400 Ã'°C. After the top electrode deposition, the films were co-fired at 900 Ã'°C for densification and crystallization. The dielectric properties were observed to improve with increasing sputter temperature reaching a permittivity of 1800, a tunability of 10:1, and a loss tangent of less than 0.015 for the sample sputtered at 400 Ã'°C. The data can be understood using a brick wall model incorporating a high permittivity grain interior with low permittivity grain boundary. However, this high permittivity value was achieved at a grain size of 80 nm, which is typically associated with strong suppression of the dielectric response. These results clearly show that conventional models that parameterize permittivity with crystal diameter or film thickness alone are insufficiently sophisticated. Better models are needed that incorporate the influence of microstructure and crystal structure. This thesis next explores the ability to tune microstructure and properties of chemically solution deposited BaTiO3 thin films by modulation of heat treatment thermal profiles and firing atmosphere composition. Barium titanate films were deposited on copper foils using hybrid-chelate chemistries. An in-situ gas analysis process was developed to probe the organic removal and.
Author: Costas G. Fountzoulas
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
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Ferroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba(0.6)Sr(0.4)Ti(1-y)(A(3+), B(5+))(y)O3 thin films, of nominal thickness of 0.65 micrometer, were synthesized initially at substrate temperatures of 400 deg C, and subsequently annealed to 750 deg C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the post-annealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.
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Author:
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Languages : en
Pages : 5
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We report a systematic study of the structural and dielectric properties of barium strontium titanate, Ba{sub 0.6}Sr{sub 0.4}TiO3 (BST-0.4), films grown by pulsed laser deposition on LaAlO3 and MgO substrates. By optimizing the processing conditions, choosing appropriate substrate materials, and constructing layered architectures, we have successfully deposited BST-0.4 films on both LaAlO3 and MgO substrates with large dielectric nonlinearity and low dielectric loss. X-ray diffraction and transmission electron microscopy analyses reveal that the dielectric tunability and the dielectric loss are closely related to the crystallinity of the BST-0.4 films. We have also observed that a small variation of D value, defined as the ratio of in-plane lattice constant/out-of-plane lattice constant, can result in a significantly large change of dielectric properties of the BST films.
Author: Mickaël Lallart
Publisher: BoD – Books on Demand
ISBN: 9533073322
Category : Science
Languages : en
Pages : 534
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Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.
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Languages : en
Pages : 9
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In this paper we investigate the microstructural accommodation of nonstoichiometry in (Ba(subscript x)Sr{sub 1-x}Ti{sub 1+y}O{sub 3+z}) thin films grown by chemical vapor deposition. Films with three different (Ba+Sr)/Ti ratios of 49/51 (y=0.04 in the notation of the formula above), of 48/52 (y=0.08) and of 46.5/53.5 (y=O.15), were studied. High-resolution electron microscopy is used to study the microstructure of the BST films. High-spatial resolution electron energy-loss spectroscopy (EELS) is used to reveal changes in chemistry and local atomic environment both at grain boundaries and within grains as a function of titanium excess. We find an amorphous phase at the grain boundaries and grain boundary segregation of excess titanium in the samples with y=0.15. In addition, EELS is also used to show that excess titanium is being partially accommodated in the grain interior. Implications for the film electrical and dielectric properties are outlined.
