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Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242
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Book Description
Author: David Louis Harame
Publisher: The Electrochemical Society
ISBN: 9781566774208
Category : Science
Languages : en
Pages : 1242
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Book Description
Author: D. F. Mallows
Publisher: Elsevier
ISBN: 1483137015
Category : Technology & Engineering
Languages : en
Pages : 273
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Book Description
Stress Analysis Problems in S.I. Units covers topics usually dealt with in HNC and HND strength of materials subjects, in CEI Part I, in the London degree subject properties of materials and stress analysis. Problems are rewritten in S.I. units, with numerical values being rounded to achieve rational metric sizes. This book is organized into 10 chapters covering various aspects involved in stress analysis. These include statics; stress and strain; two-dimensional stress systems; stresses in beams; torsion; and beam deflections. Strain energy methods, elementary plastic stress analysis, and analysis of stress in engineering components are also explained. A list of the base and derived units used in this book is given as well. This book will be very useful to students studying for CNAA degrees.
Author: Kathleen O'Rourke
Publisher: Taylor & Francis
ISBN: 1135059063
Category : Education
Languages : en
Pages : 581
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Book Description
Designed for use with children in grades K-6, this book provides a review of support groups: their nature and value; the tripartite model of children's needs, behaviours they need to learn and environmental conditions that support learning; the Keystone Learning Model, which encompasses the tripartite model, strengths and decision-making; and 'nuts and bolts' suggestions for creating and managing child support groups. The book also addresses various support groups chapter by chapter and homework ideas are provided with each chapter.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author: C.K. Maiti
Publisher: CRC Press
ISBN: 1466500557
Category : Technology & Engineering
Languages : en
Pages : 323
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Book Description
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Author: Peng Cheng Wang
Publisher: Trans Tech Publications Ltd
ISBN: 3038139254
Category : Technology & Engineering
Languages : en
Pages : 2633
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Book Description
Selected papers from the 2nd International Conference on Materials and Products Manufacturing Technology (ICMPMT 2012) September 22-23, 2012, Guangzhou, China
Author: Alexander Tokar
Publisher: Narr Francke Attempto Verlag
ISBN: 3823391801
Category : Language Arts & Disciplines
Languages : en
Pages : 254
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Book Description
This monograph is concerned with the question of why some English words have more than one stress pattern. E.g., 'overt vs. o'vert, 'pulsate vs. pul'sate, etc. It is argued that cases such as these are due to the fact that the morphological structure of one and the same English word can sometimes be analyzed in more than one way. Thus, 'overt is the stress pattern of the suffixation analysis over + -t, whereas o'vert is due to the prefixation analysis o- + -vert (cf. covert). Similarly, pulsate is simultaneously pulse + -ate (i.e., a suffixed derivative) and a back-derivative from pul'satance. "Tokar's approach in the use of both dictionary (OED) and corpus data (YouTube) holds promise of a scholarly breakthrough on the vital linguistic prosodic topic of English stress assignment of doublets and of stress assignment in general." (Irmengard Rauch, Professor of Germanic Linguistics at the University of California, Berkeley)
Author: Tomasz Brozek
Publisher: CRC Press
ISBN: 1351831348
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Author: United States. Patent and Trademark Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1472
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Book Description
Author: Richard P. Tollo
Publisher: Geological Society of America
ISBN: 0813712068
Category : Science
Languages : en
Pages : 972
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Book Description
"The Appalachians constitute one of Earth's major tectonic features and have served as a springboard for innovative geologic thought for more than 170 years. This volume contains 36 original papers reporting the results of research performed throughout nearly the entire length and breadth of the Appalachian region, including all major provinces and geographical areas. Memoir 206 was designed to commemorate the (near-)fortieth anniversary of the publication of the classic Studies of Appalachian Geology volumes that appeared just prior to the application of plate tectonic concepts to the region. Contributions concerning structural evolution, sedimentation, stratigraphy, magmatic processes, metamorphism, tectonics, and terrane accretion illustrate the wide range of ongoing research in the area and collectively serve to mark the considerable progress in scientific thought that has occurred during the past four decades."--pub. desc.
