Small Geometry Effects on Implanted MOSFET Threshold Voltage and the Current-voltage Characteristics of Long Channel Implanted MOSFETs in the Linear Region PDF Download
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Author: Mohan Yellayi
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172
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Book Description
Abstract.
Author: Mohan Yellayi
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172
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Book Description
Abstract.
Author: Wade H. Shafer
Publisher: Springer
ISBN: 9780306416613
Category : Science
Languages : en
Pages : 352
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Book Description
This series lists applicable thesis titles published in the United States and Canada. Volume 40 covers thesis year 1995. All back volumes are still available.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1132
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Book Description
Author: Wai Kai Chen
Publisher: Elsevier
ISBN: 0080477488
Category : Science
Languages : en
Pages : 1227
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Book Description
The Electrical Engineer's Handbook is an invaluable reference source for all practicing electrical engineers and students. Encompassing 79 chapters, this book is intended to enlighten and refresh knowledge of the practicing engineer or to help educate engineering students. This text will most likely be the engineer's first choice in looking for a solution; extensive, complete references to other sources are provided throughout. No other book has the breadth and depth of coverage available here. This is a must-have for all practitioners and students! The Electrical Engineer's Handbook provides the most up-to-date information in: Circuits and Networks, Electric Power Systems, Electronics, Computer-Aided Design and Optimization, VLSI Systems, Signal Processing, Digital Systems and Computer Engineering, Digital Communication and Communication Networks, Electromagnetics and Control and Systems.About the Editor-in-Chief...Wai-Kai Chen is Professor and Head Emeritus of the Department of Electrical Engineering and Computer Science at the University of Illinois at Chicago. He has extensive experience in education and industry and is very active professionally in the fields of circuits and systems. He was Editor-in-Chief of the IEEE Transactions on Circuits and Systems, Series I and II, President of the IEEE Circuits and Systems Society and is the Founding Editor and Editor-in-Chief of the Journal of Circuits, Systems and Computers. He is the recipient of the Golden Jubilee Medal, the Education Award, and the Meritorious Service Award from the IEEE Circuits and Systems Society, and the Third Millennium Medal from the IEEE. Professor Chen is a fellow of the IEEE and the American Association for the Advancement of Science.* 77 chapters encompass the entire field of electrical engineering.* THOUSANDS of valuable figures, tables, formulas, and definitions.* Extensive bibliographic references.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 1704
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1472
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Book Description
Author: Institute of Electrical and Electronics Engineers
Publisher:
ISBN:
Category : Electric engineering
Languages : en
Pages : 944
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Book Description
Issues for 1973- cover the entire IEEE technical literature.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
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Book Description
Author: Guntrade Roll
Publisher: Logos Verlag Berlin GmbH
ISBN: 3832532617
Category : Science
Languages : en
Pages : 240
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Book Description
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
