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Author: Wing-yee Winnie Chung
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 280
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Book Description
Author: Wing-yee Winnie Chung
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 280
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Book Description
Author: Peter Gerber
Publisher:
ISBN: 9783832256265
Category : Ferroelectric thin films
Languages : en
Pages : 114
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Book Description
Author: Vitaly Yuryevich Topolov
Publisher: Springer Science & Business Media
ISBN: 1848820003
Category : Science
Languages : en
Pages : 202
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Book Description
“Electromechanical Properties in Composites Based on Ferroelectrics” investigates the problem of prediction and non-monotonicity of the effective electromechanical (piezoelectric, dielectric and elastic) properties in two- and three-component composites based on ferroelectric ceramics and relaxor-ferroelectric single crystals. The book analyzes the interrelations between the electromechanical constants of the components, and describes the different analytical schemes for averaging the properties of these materials with different connectivity and microgeometrical characteristics. The book highlights the advantages of different methods for predicting the electromechanical properties and choosing the optimum components, and demonstrates the non-trivial behavior of specific composite architectures and the parameters of value for engineering applications. The book is of benefit to all specialists looking to understand the detailed behavior and electromechanical response of advanced composite materials.
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Bo Wang
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Ferroelectric materials are characterized by the presence of spontaneous polarization that can be reoriented under a sufficiently high electrical field. The couplings between ferroelectric polarization with external fields, such as temperature, mechanical stress, electrical fields, and magnetic fields, enable a multitude of applications, including pyroelectric detectors, ultrasonic transducers, energy storage capacitors, and nonvolatile random-access memories. The electromechanical coupling is particularly strong in ferroelectric materials and can manifest itself in two aspects. The primary electromechanical effect is the piezoelectricity, which describes the coupling between stress/strain and polarization/electric fields. A less well-examined electromechanical interaction is the flexoelectric effect, which associates polarization with strain gradients and mechanical stress with electric field gradients. This dissertation is about these two electromechanical coupling effects in ferroelectric materials. The dissertation is motivated by two electromechanical phenomena that have been revealed recently in ferroelectric materials at distinct length scales, namely, the AC poling effect and the mechanical switching. The first phenomenon refers to the considerable enhancement of the piezoelectric coefficient of a bulk relaxor-ferroelectric crystal by poling the crystal with alternative current (AC) electric fields compared to that poled with commonly used direct current (DC) electric fields. The second phenomenon describes the mechanically induced 180-degree polarization switching at the nanoscale by pressing an atomic force microscopy (AFM) tip onto a ferroelectric epitaxial thin film. The goal of the dissertation is to reveal and understand the primary mechanisms that govern these electromechanical phenomena by phase-field modeling and simulations and utilize the gained knowledge to guide the design of advanced materials for high-performance transduction applications and novel nonvolatile memories. The main content of the dissertation consists of two parts. In the first part, the AC poling effect on the piezoelectricity of bulk single crystals is investigated. First, the general domain size effect on the piezoelectricity of a bulk ferroelectric crystal is examined by evaluating the effective longitudinal piezoelectric coefficient of a polydomain twin structure with a varied domain size using the phase-field method and thermodynamic calculations. In contrast to the common belief that a smaller domain size always favors higher piezoelectricity, we show that the domain size effect is by no means universal; it depends on the symmetry of ferroelectric phases, types of domain walls, temperatures, external electric fields, mechanical stress, and probing directions. Moreover, the domain size effect becomes more significant in the proximity of a phase transition, regardless of the nature of the phase transition. Essentially, the domain size effect is attributed to the polarization rotation in the domain interior due to the presence of domain walls, which can give rise to either the positive domain size effect (smaller domain, higher piezoelectricity) when the polarization rotation is associated with a phase instability or the negative effect (larger domain, higher piezoelectricity) when such an instability is absent. These understandings offer new insights for the processing-microstructure-property relationship and the concept of domain engineering in piezoelectric single crystals. Next, the evolution of domain structures in relaxor-PT single crystals under AC- and DC-electric field poling is investigated by phase-field simulations in order to reveal the mechanism of AC-poling effect on the domain structure and piezoelectricity. Taking (001)-oriented rhombohedral Pb(Mg1/3Nb2/3)O3-28PbTiO3 as a model system, we find that both DC- and AC-poling can increase the domain size of the unpoled crystal and form the engineered domain structure with a lamellar configuration. However, the AC poling allows for further domain growth via the elimination of tilted 71° domain walls during the cycling of the electric field, which finally leads to a layered structure with a set of single domains separated by horizontal 109° domain walls. In contrast, the DC-poled crystal is abundant with both types of domain walls. It is also predicted that the decrease of 71° domain wall density is responsible for the enhanced longitudinal piezoelectric coefficient in AC-poled crystals. Both aspects of our theoretical findings have been corroborated by experiments. Moreover, the AC-poled crystal with the unique layered domain structure simultaneously exhibits nearly perfect optical transparency and significantly improved light transmittance, birefringence, and electro-optical coefficient aside from ultrahigh piezoelectricity. This transparent crystal with ultrahigh piezoelectricity by design will benefit hybrid opto-electromechanical applications such as photoacoustic imaging and haptic devices. The second part of the dissertation focuses on discussing the role of flexoelectricity in the mechanical switching of local polarization in ferroelectric thin films by AFM tip pressing. The mechanical switching phenomenon is investigated in (001)-oriented uniaxial tetragonal BaTiO3 thin films and multiaxial rhombohedral BiFeO3 epitaxial thin films. In BaTiO3 thin films, we systematically evaluate the critical force F_c required for the polarization reversal as functions of the AFM tip radius, misfit strain, and film thickness by performing phase-field simulations and compare our results with experiments where available. The deviations between simulation and experimental results on the film thickness dependence of F_c is elucidated by examining the misfit strain relaxation and the surface polarization relaxation. In particular, we reveal an interplay between the flexoelectric and piezoelectric effects during a loading-unloading cycle of mechanical switching. This work provides a deeper understanding of the mechanism and control of mechanically induced ferroelectric switching and thus guidance for exploring potential ferroelectric-based nanodevices utilizing mechanical switching. The mechanical switching mediated by the flexoelectric effect is limited by its unidirectional nature of the tip-induced flexoelectric field. As a result, local polarization can only be switched from upward to downward but not the opposite. A strategy is proposed to circumvent this limitation based on phase-field simulations of the mechanical switching in multiaxial BiFeO3 thin films where both out-of-plane and in-plane polarization can be reversed. Specifically, it is found that the in-plane flexoelectric field can be asymmetrically enhanced by the motion of a scanning AFM tip. By controlling the tip scan direction, one can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching. Further examinations reveal an interplay between piezoelectric and flexoelectric effects in enabling such a selective polarization switching. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for nonvolatile magnetoelectric devices and multilevel data storage.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 28
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Book Description
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Jörg Schröder
Publisher: Springer
ISBN: 3319688839
Category : Technology & Engineering
Languages : en
Pages : 293
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Book Description
The book covers experiments and theory in the fields of ferroelectrics, ferromagnets, ferroelastics, and multiferroics. Topics include experimental preparation and characterization of magnetoelectric multiferroics, the modeling of ferroelectric and ferromagnetic materials, the formation of ferroic microstructures and their continuum-mechanical modeling, computational homogenization, and the algorithmic treatment in the framework of numerical solution strategies.
Author: Seungbum Hong
Publisher: Springer Science & Business Media
ISBN: 1441990445
Category : Technology & Engineering
Languages : en
Pages : 294
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Book Description
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781721206544
Category :
Languages : en
Pages : 40
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Book Description
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented. Miranda, Felix A. and VanKeuls, Fred W. and Subramanyam, Guru and Mueller, Carl H. and Romanofsky, Robert R. and Rosado, Gerardo Glenn Research Center NASA/TM-2000-208876, E-11586, NAS 1.15:208876
