Author: Karim Bellahsni
Publisher:
ISBN:
Category :
Languages : fr
Pages : 180
Book Description
Dans ce travail, un modèle Monte Carlo bidimensionnel, tenant compte du courant grille a été développé afin d'étudier le fonctionnement et de prédire les performances des transistors à effet de champ à hétérojonctions à grille isolée. Le premier chapitre est consacré, d'une part à la présentation générale du composant à grille isolée MIS-LIke-FET AlGaAs/GaAs, de sont intérêt et de ses domaines d'applications et d'autre part, à la description de la méthode de simulation que nous avons mise au point. Une étude complète du fonctionnement d'un composant MIS-LIke-FET AlGa/GaAs autoaligné est effectuée dans le deuxième chapitre. Les différents mécanismes physiques à l'origine de l'effet de résistance différentielle négative sont particulièrement examinés. Dans le troisième chapitre, nous étudions l'influence de nombreux paramètres technologiques sur les performances du MIS-Like-FET AlGaAs/GaAs et principalement sur les conditions d'obtention d'un régime optimal de résistance différentielle négative. Une comparaison théorie-expérience est effectuée. Le quatrième chapitre est consacré à la présentation et à l'étude du fonctionnement du transistor D.M.T. AlGaAs/GaAs qui dérive du MIS-Like-FET AlGaAs/GaAs par l'utilisation d'un canal dopé et qui permet d'obtenir un courant beaucoup plus important que ce dernier. Dans un but prospectif, le cinquième chapitre traite du fonctionnement et des performances des transistors MIS-Like-FET et D.M.T. composés d'hétérostructures AlInAs/GaInAs présentant des propriétés de transport électronique plus intéressantes que AlGaAs/GaAs
Simulation Monte Carlo dibimensionnelle de transistors à effet de champ à grille isolée sur hétérostructures III-V
The Monte Carlo Method for Semiconductor Device Simulation
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 3709169631
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Publisher: Springer Science & Business Media
ISBN: 3709169631
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Monte Carlo Device Simulation
Author: Karl Hess
Publisher: Springer Science & Business Media
ISBN: 1461540267
Category : Technology & Engineering
Languages : en
Pages : 317
Book Description
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Publisher: Springer Science & Business Media
ISBN: 1461540267
Category : Technology & Engineering
Languages : en
Pages : 317
Book Description
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Monte-Carlo Simulation of Electron Transport in III-Vsemiconductor Heterostructures
Author: M. E. Klausmeier-Brown
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description