The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation PDF Download
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Author: Mahdi Pourfath
Publisher: Springer
ISBN: 370911800X
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Author: Mahdi Pourfath
Publisher: Springer
ISBN: 370911800X
Category : Technology & Engineering
Languages : en
Pages : 268
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Book Description
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Tibor Grasser
Publisher: Springer Nature
ISBN: 3030375005
Category : Technology & Engineering
Languages : en
Pages : 724
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Book Description
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author: T. E. Simos
Publisher: World Scientific
ISBN: 9789812704658
Category : Mathematics
Languages : en
Pages : 724
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Book Description
In the past few decades, many significant insights have been gained into several areas of computational methods in sciences and engineering. New problems and methodologies have appeared in some areas of sciences and engineering. There is always a need in these fields for the advancement of information exchange. The aim of this book is to facilitate the sharing of ideas, problems and methodologies between computational scientists and engineers in several disciplines. Extended abstracts of papers on the recent advances regarding computational methods in sciences and engineering are provided. The book briefly describes new methods in numerical analysis, computational mathematics, computational and theoretical physics, computational and theoretical chemistry, computational biology, computational mechanics, computational engineering, computational medicine, high performance computing, etc.
Author: Dragica Vasileska
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 782
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Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Author: Mark Lundstrom
Publisher: Springer Science & Business Media
ISBN: 0387280030
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: Geyong Min
Publisher: Springer Science & Business Media
ISBN: 3540498605
Category : Computers
Languages : en
Pages : 1176
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Book Description
This book constitutes the refereed joint proceedings of ten international workshops held in conjunction with the 4th International Symposium on Parallel and Distributed Processing and Applications, ISPA 2006, held in Sorrento, Italy in December 2006. It contains 116 papers that contribute to enlarging the spectrum of the more general topics treated in the ISPA 2006 main conference.
Author: Michael Bonitz
Publisher: World Scientific
ISBN: 9789812705129
Category : Medical
Languages : en
Pages : 556
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Book Description
Equilibrium and nonequilibrium properties of correlated many-body systems are of growing interest in many areas of physics, including condensed matter, dense plasmas, nuclear matter and particles. The most powerful and general method which is equally applied to all these areas is given by quantum field theory. This book provides an overview of the basic ideas and concepts of the method of nonequilibrium Green''s functions, written by the leading experts and presented in a way accessible to non-specialists and graduate students. It is complemented by invited review papers on modern applications of the method to a variety of topics, such as optics and quantum transport in semiconductors; superconductivity; strong field effects, QCD, and state-of-the-art computational concepts OCo from Green''s functions to quantum Monte Carlo and time-dependent density functional theory.The proceedings have been selected for coverage in: OCo Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)"
Author: Hideaki Tsuchiya
Publisher: John Wiley & Sons
ISBN: 1118871723
Category : Technology & Engineering
Languages : en
Pages : 265
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Book Description
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Author: Gerhard Wachutka
Publisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
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Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
