Silicon Materials Task of the Low Cost Solar Array Project, (phase II) PDF Download
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Category : Dendritic crystals
Languages : en
Pages :
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Author:
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Category : Dendritic crystals
Languages : en
Pages :
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Category : Dendritic crystals
Languages : en
Pages : 59
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Author: Westinghouse Electric Corporation. Research & Development Center
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Category : Dendritic crystals
Languages : en
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Category :
Languages : en
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Category : Silicon
Languages : en
Pages :
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Author: Westinghouse Electric Corporation. Research & Development Center
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Category :
Languages : en
Pages : 52
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Category :
Languages : en
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Category : Silicon
Languages : en
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Category :
Languages : en
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The effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells were investigated. A variety of aspects including thermal treatments, crystal growth rate, base doping concentration (low resistivity), base doping type (n vs. p), grain boundary structure, and carbon/oxygen-metal interactions (float zone vs Czochralski growth) were studied. The effects of various metallic impurities were studied, introduced singly or in combination into Czochralski, float zone and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The totality of the solar cell data (comprising over 4000 cells) indicate that impurity-induced performance loss is primarily due to reduction in base diffusion length. Based on this assumption an analytical model has been developed which predicts cell performance as a function of metal impurity content. The model has now been verified for p-base material by correlating the projected and measured performance of solar cells made on 19 ingots bearing multiple impurities.
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Languages : en
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It was proposed to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort has been in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo and C, and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The lifetime of uncontaminated silicon was mesured as a function of heat treatment temperature (200 to 1200°C). The performance of solar cells fabricated on silicon web crystals grown from melts containing about 1018cm−3 of Cr, Mn, Fe, Ni, Ti and V, respectively, were measured. Deep level spectroscopy of metal-contaminated ingots has been employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.
