Silicon Carbide Field-Effect Transistor (FET) Transducers for Harsh Environment Applications PDF Download
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Author: Walter Daves
Publisher:
ISBN: 9783844016819
Category :
Languages : en
Pages : 170
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Book Description
Author: Walter Daves
Publisher:
ISBN: 9783844016819
Category :
Languages : en
Pages : 170
Get Book Here
Book Description
Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380
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Book Description
Author: Maximilian Fleischer
Publisher: Springer Science & Business Media
ISBN: 3642280935
Category : Science
Languages : en
Pages : 274
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Book Description
Gas sensor products are very often the key to innovations in the fields of comfort, security, health, environment, and energy savings. This compendium focuses on what the research community labels as solid state gas sensors, where a gas directly changes the electrical properties of a solid, serving as the primary signal for the transducer. It starts with a visionary approach to how life in future buildings can benefit from the power of gas sensors. The requirements for various applications, such as for example the automotive industry, are then discussed in several chapters. Further contributions highlight current trends in new sensing principles, such as the use of nanomaterials and how to use new sensing principles for innovative applications in e.g. meteorology. So as to bring together the views of all the different groups needed to produce new gas sensing applications, renowned industrial and academic representatives report on their experiences and expectations in research, applications and industrialisation.
Author: Stephen E. Saddow
Publisher: Artech House
ISBN: 9781580537414
Category : Science
Languages : en
Pages : 236
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Book Description
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author: Dharmendra Singh Yadav
Publisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author: Kevin M. Speer
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Book Description
A novel field-effect transistor architecture is introduced that uses a micromachined, sealed vacuum cavity as the gate dielectric and 4H-SiC as the semiconductor material. The device is called a vacuum field-effect transistor, or VacFET. First and foremost, the SiC VacFET has been developed as a technology platform for the fundamental characterization of SiC inversion layer properties in a way that is not confounded by interface states, traps, fixed charge, mobile ions, or other defects whose origin and influence have been the subject of much debate in the SiC MOSFET community for decades. The SiC VacFET has tremendous potential in other application spaces as well, such as integrated pressure sensing-electronics, ultra-radiation-resistant device technology, and more. This work takes us from conception to characterization. Following a thorough design stage consisting of first-principles analysis, simulation of mechanical and electronic performance, and development and optimization of a process flow, the SiC VacFET has been fabricated and successfully demonstrated on the very first run. The device exhibits the two marks of a field-effect transistor: non-negligible drain current and conductivity modulation, both due to voltage applied at the gate. Turn-on behavior, threshold voltage and its deviation from ideal, output characteristics, effective inversion layer mobility, and threshold voltage instability have been measured in the dark and under ultraviolet illumination. These performance parameters of the SiC VacFET have also been compared to SiC MOSFETs fabricated on the same wafer, and important observations have already been made regarding fixed positive charge and interface traps in the SiO2-SiC system.
Author: Stephen E. Saddow
Publisher: Elsevier
ISBN: 0128030054
Category : Technology & Engineering
Languages : en
Pages : 380
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Book Description
Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications. SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants. This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions. - Discusses the properties, processing, characterization, and application of silicon carbide biomedical materials and related technology - Assesses literature, patents, and FDA approvals for clinical trials, enabling rapid assimilation of data from current disparate sources and promoting the transition from technology R&D, to clinical trials - Includes more on applications and devices, such as SiC nanowires, biofunctionalized devices, micro-electrode arrays, heart stent/cardiovascular coatings, and continuous glucose sensors, in this new edition
Author: Hoang-Phuong Phan
Publisher: Springer
ISBN: 3319555448
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.
Author: J. Wang
Publisher: The Electrochemical Society
ISBN: 156677571X
Category : Compound semiconductors
Languages : en
Pages : 300
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Book Description
This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.
Author: Lisa V. Rozario
Publisher:
ISBN:
Category : Materials at high temperatures
Languages : en
Pages : 226
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Book Description
