Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable-capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage-controlled Function PDF Download
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Author: Sitarama Raju Gottumukkala
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41
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Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Author: Sitarama Raju Gottumukkala
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41
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Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Author: Kiran Kumar Rambappagari
Publisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 48
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Book Description
In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Author: Ho-Young Cha
Publisher:
ISBN:
Category :
Languages : en
Pages : 360
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Book Description
Author: Siddharth Nirmal
Publisher:
ISBN:
Category :
Languages : en
Pages : 162
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Book Description
Author: Raymond S. Pengelly
Publisher: IET
ISBN: 1884932509
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Author: Bhavik Patel
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Ali M. Niknejad
Publisher: Springer Science & Business Media
ISBN: 0306470381
Category : Technology & Engineering
Languages : en
Pages : 193
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Book Description
The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
Author: Paul Richman
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 280
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Book Description
Author: Walter Daves
Publisher:
ISBN: 9783844016819
Category :
Languages : en
Pages : 170
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Book Description
Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
