Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 PDF Download
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Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author: J. M. Drake
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 412
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Mark Aindow
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 360
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566773966
Category : Computers
Languages : en
Pages : 488
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Book Description
Author: Diana Farkas
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author:
Publisher:
ISBN:
Category : Manufacturing processes
Languages : en
Pages : 280
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Book Description
Author:
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 456
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Book Description
Author:
Publisher:
ISBN:
Category : Molecular dynamics
Languages : en
Pages : 358
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Book Description
