Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Resonant Tunneling in Semiconductors
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Publisher: Springer Science & Business Media
ISBN: 1461538467
Category : Science
Languages : en
Pages : 526
Book Description
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Resonant Tunneling in Semiconductors
Author: L. L. Chang
Publisher:
ISBN: 9781461538479
Category :
Languages : en
Pages : 558
Book Description
Publisher:
ISBN: 9781461538479
Category :
Languages : en
Pages : 558
Book Description
The Physics and Applications of Resonant Tunnelling Diodes
Author: Hiroshi Mizuta
Publisher: Cambridge University Press
ISBN: 0521432189
Category : Science
Languages : en
Pages : 255
Book Description
A comprehensive description of the physics and applications of resonant tunnelling diodes.
Publisher: Cambridge University Press
ISBN: 0521432189
Category : Science
Languages : en
Pages : 255
Book Description
A comprehensive description of the physics and applications of resonant tunnelling diodes.
RESONANT TUNNELING DIODE PHOTONICS
Author: C. N. IRONSIDE
Publisher:
ISBN: 9780750330220
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN: 9780750330220
Category :
Languages : en
Pages :
Book Description
Resonant Tunneling Diode Photonics Devices and Applications (Second Edition)
Author: Charlie Ironside
Publisher:
ISBN: 9780750357128
Category : Science
Languages : en
Pages : 0
Book Description
The book uses a combination of quantum theory, semiconductor physics, and nonlinear dynamics to explain how resonant tunneling diode-based photonic devices can contribute to the development of photonic and neuromorphic systems and implement hardware specifically designed for neural networks which are at the heart of artificial intelligence.
Publisher:
ISBN: 9780750357128
Category : Science
Languages : en
Pages : 0
Book Description
The book uses a combination of quantum theory, semiconductor physics, and nonlinear dynamics to explain how resonant tunneling diode-based photonic devices can contribute to the development of photonic and neuromorphic systems and implement hardware specifically designed for neural networks which are at the heart of artificial intelligence.
Resonant Tunneling in III-V Semiconductor Heterostructures
Author: Ravindra Manohar Kapre
Publisher:
ISBN:
Category :
Languages : en
Pages : 414
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 414
Book Description
Resonant Tunneling of Electrons in Asymmetric Triple-barrier Semiconductor Heterostructures
Author: Kevin Lamonte Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Book Description
Theoretical Investigations of Electronic Surface States and Resonant Tunneling in Semiconductor Heterostructures
Author: Nawej Mwez
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
Book Description
Theoretical Studies of Resonant Tunneling in Semiconductor Heterostructures in an Applied Constant Electric Field
Author: Shaune Stephen Allen
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
Book Description
Donor-assisted Resonant Tunneling in Semiconductor Heterostructures
Author: João Wesley Lopes Sakai
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
Book Description