Residual Stresses in Cubic Boron Nitride Thin Films Deposited by Ion-assisted Laser Ablation PDF Download
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Author: Gregory Frank Cardinale
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
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Author: Gregory Frank Cardinale
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements. The characteristic evolution of the instantaneous stress during the layered growth of cBN films observed in IBAD experiments, could be reproduced for magnetron sputter deposition. To achieve simultaneous stress relaxation by ion implantation, a complex bipolar pulsed substrate bias source was constructed. This power supply enables the growth of cBN thin films under low energy ion irradiation (up to 200 eV) and, for the first time, the simultaneous implantation of ions with an energy of up to 8 keV during high voltage pulses. It was demonstrated that the instantaneous stress in cBN thin films can be released down to -1.1 GPa by simultaneous ion bombardment during the high voltage pulses. A simultaneous stress relaxation during growth is possible in the total investigated ion energy range between 2.5 and 8 keV. These are the lowest ion energies reported for the stress relaxation in cBN. Since such a substrate bias power supply is easy to integrate in existing process lines, this result is important for industrial deposition of thin films, not only for cubic boron nitride films. It was found that the amount of stress relaxation depends on the number of atomic displacements (displacements per atom: dpa) that are induced by the high energy ion bombardment and is therefore dependent on the ion energy and the high energy ion flux. In practise, this means that the stress relaxation is controlled by the product of the pulse voltage and the pulse duty cycle or frequency. The cantilever bending measurements were complemented on microscopic scale by x-ray diffraction (XRD). The analysis of the cBN (111) lattice distances revealed a pronounced biaxial compressive state of stress in.
Author: Horst Feldermann
Publisher: Cuvillier Verlag
ISBN: 9783898734202
Category : Hochschulschrift
Languages : en
Pages : 130
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Author: Vinit O. Todi
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 130
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Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, [greek lower case letter beta]-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with K[less than]3. BCN shows promise as a low dielectric constant material with good mechanical strength suitable to be used in newer CMOS technologies. For optical applications, the deposition of BCN coatings on polymers is a promising method for protecting the polymer surface against wear and scratching. BCN films have high optical transparency and thus can be used as mask substrates for X-ray lithography. Most of the efforts from different researchers were focused to deposit cubic boron nitride and boron carbide films. Several methods of preparing boron carbon nitride films have been reported, such as chemical vapor deposition (CVD), plasma assisted CVD, pulsed laser ablation and ion beam deposition. Very limited studies could be found focusing on the effect of nitrogen incorporation into boron carbide structure by sputtering. In this work, the deposition and characterization of amorphous thin films of boron carbon nitride (BCN) is reported. The BCN thin films were deposited by radio frequency (rf) magnetron sputtering system. The BCN films were deposited by sputtering from a high purity B4C target with the incorporation of nitrogen gas in the sputtering ambient. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform BCN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 700°C. Electrical and optical characteristics are also investigated with interesting results. The optical band gap of the films ranged from 2.0 eV - 3.1 eV and increased with N2/Ar gas flow ratio except at the highest ratio. The optical band gap showed an increasing trend when annealed at higher temperatures. The effect of deposition temperature on the optical and chemical compositions of the BCN films was also studied. The band gap increased with the deposition temperature and the films deposited at 500°C had the highest band gap. Dielectric constant was calculated from the Capacitance-Voltage curves obtained for the MOS structures with BCN as the insulating material. Aluminum was used as the top electrode and the substrate was p-type Si. Effect of N2/Ar gas flow ratio and annealing on the values of dielectric constant was studied and the dielectric constant of 2.5 was obtained for the annealed BCN films. This by far is the lowest value of dielectric constant reported for BCN film deposited by sputtering. Lastly, the future research work on the BCN films that will be carried out as a part of the dissertation is proposed.
Author: B.D. Sartwell
Publisher: Elsevier
ISBN: 0444601104
Category : Technology & Engineering
Languages : en
Pages : 1129
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Metallurgical Coatings and Thin Films 1990 presents the Proceedings of the 17th International Conference on Metallurgical Coatings and 8th International Conference on Thin Films, held in San Diego, California on April 2-6, 1990. It contains 219 papers covering a wide range of topics related to metallurgical coatings and thin films, including high temperature coatings, hard coatings, diamond films, tribology, and ion beam modification. Organized into 99 chapters, this volume begins with a discussion of a thermochemical model for diamond growth from the vapor phase and an experiment in large area diamond coating using a combustion flame torch in its traversing mode. It then explores the properties of diamond films, preparation of diamond-like carbon films using various ion-beam-assisted techniques, deposition of diamond-like films by laser ablation, and coating of cubic BN films on different substrates. The book examines surface processes and rate-determining steps in plasma-induced chemical vapor deposition, and addition of rare earths to improve scale adherence on heat-resisting alloys and coatings. The reader is introduced to high temperature wear and clearance control coatings, thermal barrier coatings, and corrosion resistant coatings. The book also discusses modification of coatings/surfaces to reduce friction; the mechanics of the tribology of thin films systems; mechanochemical interactions in the tribological behavior of materials; analysis and micromechanical testing of tribological coatings; surface modification using directed ion beams; and industrial equipment and processes. This book is a valuable resource for students and researchers interested in metallurgical coatings and thin films.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892
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Author: Barbara Abendroth
Publisher:
ISBN:
Category :
Languages : en
Pages : 111
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Author: C. R. Abernathy
Publisher: The Electrochemical Society
ISBN: 9781566771870
Category : Science
Languages : en
Pages : 310
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Author: Barbara Abendroth
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Hongbin Zhu
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 114
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