Relationships Between Ferroelectric 90[degree] Domain Formation and Electrical Properties of Chemically Prepared Pb(Zr, Ti)O[sub 3] Thin Films PDF Download
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90[degree] domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90[degree] domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90[degree] domains is severely limited. Thus, formation of these 90[degree] domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm[sup 2]) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm[sup 2]) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90[degree] domain relationships appear similar to those in the bulk. The effect of grain size on 90[degree] domain formation and electrical properties are discussed.
![Relationships Between Ferroelectric 90[degree] Domain Formation and Electrical Properties of Chemically Prepared Pb(Zr, Ti)O[sub 3] Thin Films PDF](https://books.google.com/books/content/images/frontcover/wjfhjwEACAAJ?fife=w80-h100)
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90[degree] domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90[degree] domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90[degree] domains is severely limited. Thus, formation of these 90[degree] domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm[sup 2]) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm[sup 2]) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90[degree] domain relationships appear similar to those in the bulk. The effect of grain size on 90[degree] domain formation and electrical properties are discussed.
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Languages : en
Pages : 20
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90° domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90° domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90° domains is severely limited. Thus, formation of these 90° domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm2) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm2) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90° domain relationships appear similar to those in the bulk. The effect of grain size on 90° domain formation and electrical properties are discussed.
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Languages : en
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Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Tony Schenk
Publisher: BoD – Books on Demand
ISBN: 3743127296
Category : Technology & Engineering
Languages : en
Pages : 194
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In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Author: Gianfranco Pacchioni
Publisher: John Wiley & Sons
ISBN: 3527640193
Category : Technology & Engineering
Languages : en
Pages : 368
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A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors Titania Thin Films in Biocompatible Materials and Medical Implants Oxide Nanowires for New Chemical Sensor Devices
Author: Seshu B. Desu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Edward R. Myers
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 376
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Meng Gu
Publisher:
ISBN: 9781267240491
Category :
Languages : en
Pages :
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Materials with the ABO3 perovskite structure possess a wide variety of properties including superconductivity, ferroelectric, and magnetic properties. These properties are highly tunable due to the fact that the B site cation can assume multiple valence states and its high structural stability allows for large scale doping and strain. Due to a reduced dimensionality, two dimensional thin films and superlattices grown using techniques such as pulsed laser deposition (PLD) often possess novel properties which differ from the bulk perovskite materials. The origins of these novel properties can be traced to interfacial chemical intermixing, electronic reconstruction, strain as well as defect formation, which cause significant changes in the electronic structures. Therefore, it is crucially important to investigate the atomic and electronic structures of the functional materials in order to understand the correlation between microstructures and physical properties. Chemically-sensitive Z-contrast imaging and bonding-sensitive electron energy loss spectroscopy (EELS) in aberration corrected scanning transmission electron microscopes (STEM) can directly characterize the local structure, strain, composition and bonding on the atomic scale. Determination of the atomic and electronic structures of the interfaces and defects in the thin films can then be correlated with the magnetic and transport properties. Therefore, the understanding of the structure-property relationship for several different systems of perovskite oxide thin films and superlattices were developed on the atomic scale. Multifunctional superlattices composed of ferromagnetic (FM) La(0.7)Sr(0.3)MnO3 (LSMO) and antiferromagnetic (AFM) La(0.7)Sr(0.3)FeO3 (LSFO) have potential applications for next generation data storage and logic devices. Defect formation, driven by strain relaxation in the LSMO/LSFO superlattices can modify not only the structure and surface sharpness, but also the functional properties of the superlattice. Stacking faults were found as one efficient way of strain relaxation while maintaining robust antiferromagnetic properties for a thin [3LSMO][6LSFO] superlattice (repeating motif composed of 3 unit-cell LSMO sublayer and 6 unit-cell LSFO sublayer). On the other hand, for a fully strained [3LSMO][6LSFO], large inter-diffusion across the interface between the LSMO and LSFO layers was detected in EELS line scans, resulting in deteriorated AFM properties. When a [6LSMO][6LSFO] superlattice with one micron thickness, a high density of nanoflowers and cracks/pinholes were observed to result from strain relaxation. The formation of these nanoflowers and cracks/pinholes was suppressed by increasing the growth rate and thereby reducing the growth time and overall thermal treatment of the sample. Strain relaxation was shown to be directly related to the growth conditions and have a large effect on both the structure and functional properties of the superlattices. A series of superlattices composed of non-magnetic La(0.5)Sr(0.5)TiO3 (LSTO) and ferromagnetic LSMO were grown on single crystal oxide substrates with different amounts of misfit strain. No significant electronic structure changes along the interfaces was observed in this series of superlattices as revealed by atomic resolution EELS. In comparison, charge transfer effect was reported for the LSMO/STO superlattices and was shown to cause an ultrathin magnetic dead layer along the interfaces. Thus, compared with the LSMO/STO superlattice, composition tuning of the sublayers was proven to be efficient in controlling the interfacial charge transfer effects in a superlattice. In addition, tetragonal distortion was found to reduce the ferromagnetic ordering, decrease the Tc, increase the resistivity, and even lead to metal-insulator transitions of the superlattices. The strain relaxation defects such as dislocations and low angle grain boundaries serve as important pinning sites for magnetic domains, leading to enhanced coercive field strength. In order to determine the properties of an intermixed interface layer, we have performed a detailed study of the solid solution between LSMO and LSFO, i.e. La(0.7)Sr(0.3)Mn(0.5)Fe(0.5)O3 (LSMFO). A large target-substrate distance during the PLD growth led to cation segregation in the LSMFO film. Cation segregation could cause the formation of diverse local magnetic ordering and B site valence states due to the different local stoichiometry and coordination environment. For the cation segregated LSFMO films, robust ferromagnetic and antiferromagnetic coupling was observed at 150K and room temperature. Decreasing the target-substrate distance resulted to a homogeneous cation distribution in the film, without any ferromagnetic ordering as expected. This result suggests the important role of target-substrate distance and the kinetic energy of the plume species on the crystalline quality and functional properties of perovskite oxide thin films. La(x)Sr(1-x)TiO3 possesses a wide range of functional properties which make it an attractive candidate material for applications such as the conductive buffer for high temperature superconductor growth, transparent conductors, and anodes in solid oxide fuel cells. La(0.5)Sr(0.5)TiO3 thin films were grown using PLD and the resistivity was found to be highly dependent on the O2 background pressure used in the deposition. However, a thin film which was deposited as a single phase film was transformed into a semi-ordered superlattice with TiO2 rich stacking faults and distorted lattices upon exposure to high oxygen pressure (~200torr) during the cooling procedure after deposition. This phase change stabilized Ti4+ ions and dramatically increased the resistivity of the film. In addition, a two dimensional free electron gas could be constructed by confining a few unit cells of La doped STO with STO spacer layers. Our study showed that charge transfer over a distance of ~2 u.c. was present in Sr(0.75)La(0.25)TiO3/STO superlattices. This thickness defined the lower limit for the thickness of the STO spacers in order to confine the charge carriers into two dimensions; secondly, the La dopants were shown to be less localized in thicker superlattice (~100nm) due to interdiffusion upon extended thermal exposure. This information provided important feedback on the fabrication and utilization of this material.In conclusion, several perovskite thin film systems with fascinating properties have been explored in this thesis. Strain states and strain relaxations, defect formation, interfacial atomic mixing, charge transfer, and cation segregation were shown to have profound effect on the functional properties of complex oxide thin film systems. Atomic resolution Z-contrast imaging and EELS provide extremely useful information on the structural and electronic structure variations, which enable us to see the whole picture of growth, structure and properties' interactions.
