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Languages : en
Pages : 4
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Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
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Languages : en
Pages : 4
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Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
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Languages : en
Pages : 0
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Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
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Languages : en
Pages : 7
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This conference paper provides a brief look at the current U.S. research and development (R & D) investments in photovoltaics, covering the spectrum from materials and devices through electronics and systems reliability. The program is balanced among fundamental R & D, technology development, and systems performance and reliability, with more than half the funding for university and industry partners. The major activities can be categorized into two general areas: improving current and near-term technologies toward their expected performance levels (the largest portion), and positioning the United States for technical leadership, decision making, and ownership for the host of next-technology options (including some options that have been called third-generation). The investments in these higher risk, longer-term technology generations provide options that could leapfrog into more rapid use because of their promise of potentially high payoff. Solar electricity is part of America's present and future energy security and independence-as is the R & D that enables it.
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
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Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: T. Wang
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Category :
Languages : en
Pages : 5
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Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
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Category :
Languages : en
Pages : 149
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Languages : en
Pages : 0
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The authors report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields device-quality epitaxial Si at the comparatively low temperatures of 195 to 450 C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4,500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 5 x 104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of the current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.
Author: George E. Totten
Publisher: CRC Press
ISBN: 9780203970928
Category : Technology & Engineering
Languages : en
Pages : 992
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Book Description
Reviewing an extensive array of procedures in hot and cold forming, casting, heat treatment, machining, and surface engineering of steel and aluminum, this comprehensive reference explores a vast range of processes relating to metallurgical component design-enhancing the production and the properties of engineered components while reducing manufacturing costs. It surveys the role of computer simulation in alloy design and its impact on material structure and mechanical properties such as fatigue and wear. It also discusses alloy design for various materials, including steel, iron, aluminum, magnesium, titanium, super alloy compositions and copper.
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Category :
Languages : en
Pages : 2
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We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.
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Category : Amorphous semiconductors
Languages : en
Pages : 840
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