Author: Wen-Sen Pan
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
Book Description
Reactive Ion Etching of Sputtered Silicon Carbide and Tungsten Thin Films for Device Applications
Author: Wen-Sen Pan
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 171
Book Description
Silicon Carbide Thin Film Deposition by Reactive Ion-Beam Sputtering
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 69
Book Description
In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with a graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended (silicon)target would have reduced experimental errors.
Publisher:
ISBN:
Category :
Languages : en
Pages : 69
Book Description
In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a film's optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy (beam voltage) was varied. The final series also varied beam energy, but was grown with a graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended (silicon)target would have reduced experimental errors.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
Book Description
Silicon Carbide Thin Film Deposition by Reactive Ion-beam Sputtering
Author: Larry G. Sills (MAJ, USAF.)
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages :
Book Description
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 852
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 852
Book Description
Government Reports Annual Index
Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1312
Book Description
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1312
Book Description
Sputtering Materials for VLSI and Thin Film Devices
Author: Jaydeep Sarkar
Publisher: William Andrew
ISBN: 0815519877
Category : Technology & Engineering
Languages : en
Pages : 614
Book Description
An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues. The content of the book has been divided into two sections: (a) the first section (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the second section (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications. In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful. . - Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirements - Practical information on technology trends, role of sputtering and major OEMs - Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. - Practical case-studies on target performance and troubleshooting - Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry
Publisher: William Andrew
ISBN: 0815519877
Category : Technology & Engineering
Languages : en
Pages : 614
Book Description
An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes. Two unique chapters of this book deal with productivity and troubleshooting issues. The content of the book has been divided into two sections: (a) the first section (Chapter 1 to Chapter 3) has been prepared for the readers from a range of disciplines (e.g. electrical, chemical, chemistry, physics) trying to get an insight into use of sputtered films in various devices (e.g. semiconductor, display, photovoltaic, data storage), basic of sputtering and performance of sputtering target in relation to productivity, and (b) the second section (Chapter 4 to Chapter 8) has been prepared for readers who already have background knowledge of sputter deposition of thin films, materials science principles and interested in the details of sputtering target manufacturing methods, sputtering behavior and thin film properties specific to semiconductor, liquid crystal display, photovoltaic and magnetic data storage applications. In Chapters 5 to 8, a general structure has been used, i.e. a description of the applications of sputtered thin films, sputtering target manufacturing methods (including flow charts), sputtering behavior of targets (e.g. current - voltage relationship, deposition rate) and thin film properties (e.g. microstructure, stresses, electrical properties, in-film particles). While discussing these topics, attempts have been made to include examples from the actual commercial processes to highlight the increased complexity of the commercial processes with the growth of advanced technologies. In addition to personnel working in industry setting, university researchers with advanced knowledge of sputtering would also find discussion of such topics (e.g. attributes of target design, chamber design, target microstructure, sputter surface characteristics, various troubleshooting issues) useful. . - Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirements - Practical information on technology trends, role of sputtering and major OEMs - Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. - Practical case-studies on target performance and troubleshooting - Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 770
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 770
Book Description
Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases
Author: J. Sugiura
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 504
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 504
Book Description