Radioactive Ion Implantation of Thermoplastic Elastomers PDF Download
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Author: Veronica Borcea
Publisher: Presses univ. de Louvain
ISBN: 9782874631276
Category : Science
Languages : en
Pages : 190
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Book Description
The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application of RII to control the wear of polymers is potentially of interest, but it has been lagging behind because of uncertainties related to possible changes in material properties during and after the implantation, and to the exact shape of implantation profiles. In this thesis, we investigate these issues on two thermoplastic elastomers, among which one contains radiation-sensitive unsaturated bonds, using as ions 7Be, 7Li and Kr. The results of the sample characterisation indicate that the 7Be and 7Li implantations, under properly-selected conditions, do not induce significant modifications in the materials. The implantation of a stack of polymer thin films and the activity measurements performed to determine the implantation profile are also presented. The experimental results on the ion implantation profiles and the determination of calibration curves are presented and discussed in comparison with simulated results. The results indicate that it is possible to predict the implantation profile by means of simulations. This bodes well for the application of the RII method to polymer materials. An experimental study is presented regarding the possible redistribution of the implanted 7Be after implantation. Since very few existing experimental techniques are able to detect light elements implanted in polymer targets at fluences less or equal to 1012 cm-2, with implantation depths of a few μm, a new method is presented, which implies the use of plasma etching techniques in order to remove layers of polymers and measuring the remaining activity after each step. Our results indicate that a redistribution of the implanted ions takes place during the implantation process, resulting in a scrambling of the initial implantation profile. Nevertheless, provided a suitable methodology be used, wear measurements in polymers by using the RII method are still possible, as we propose in the thesis.
Author: Veronica Borcea
Publisher: Presses univ. de Louvain
ISBN: 9782874631276
Category : Science
Languages : en
Pages : 190
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Book Description
The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application of RII to control the wear of polymers is potentially of interest, but it has been lagging behind because of uncertainties related to possible changes in material properties during and after the implantation, and to the exact shape of implantation profiles. In this thesis, we investigate these issues on two thermoplastic elastomers, among which one contains radiation-sensitive unsaturated bonds, using as ions 7Be, 7Li and Kr. The results of the sample characterisation indicate that the 7Be and 7Li implantations, under properly-selected conditions, do not induce significant modifications in the materials. The implantation of a stack of polymer thin films and the activity measurements performed to determine the implantation profile are also presented. The experimental results on the ion implantation profiles and the determination of calibration curves are presented and discussed in comparison with simulated results. The results indicate that it is possible to predict the implantation profile by means of simulations. This bodes well for the application of the RII method to polymer materials. An experimental study is presented regarding the possible redistribution of the implanted 7Be after implantation. Since very few existing experimental techniques are able to detect light elements implanted in polymer targets at fluences less or equal to 1012 cm-2, with implantation depths of a few μm, a new method is presented, which implies the use of plasma etching techniques in order to remove layers of polymers and measuring the remaining activity after each step. Our results indicate that a redistribution of the implanted ions takes place during the implantation process, resulting in a scrambling of the initial implantation profile. Nevertheless, provided a suitable methodology be used, wear measurements in polymers by using the RII method are still possible, as we propose in the thesis.
Author: Ratna Tantra
Publisher: John Wiley & Sons
ISBN: 1118753933
Category : Science
Languages : en
Pages : 400
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Book Description
Nanomaterial Characterization Providing various properties of nanomaterials and the various methods available for their characterization Over the course of the last few decades, research activity on nanomaterials has gained considerable press coverage. The use of nanomaterials has meant that consumer products can be made lighter, stronger, esthetically more pleasing, and less expensive. The significant role of nanomaterials in improving the quality of life is clear, resulting in faster computers, cleaner energy production, target-driven pharmaceuticals, and better construction materials. It is not surprising, therefore, that nanomaterial research has really taken off, spanning across different scientific disciplines from material science to nanotoxicology. A critical part of any nanomaterial research, however, is the need to characterize physicochemical properties of the nanomaterials, which is not a trivial matter. Nanomaterial Characterization: An Introduction is dedicated to understanding the key physicochemical properties and their characterization methods. Each chapter begins by giving an overview of the topic before a case study is presented. The purpose of the case study is to demonstrate how the reader may make use of the background information presented to them and show how this can be translated to solve a nanospecific application scenario. Thus, it will be useful for researchers in helping them design experimental investigations. The book begins with a general overview of the subject, thus giving the reader a solid foundation to nanomaterial characterization. Nanomaterial Characterization: An Introduction features: Nanomaterial synthesis and reference nananomaterials Key physicochemical properties and their measurements including particle size distribution by number, solubility, surface area, surface chemistry, mechanical/tribological properties, and dustiness Scanning tunneling microscopy methods operated under extreme conditions Novel strategy for biological characterization of nanomaterial methods Methods to handle and visualize multidimensional nanomaterial characterization data The book is written in such a way that both students and experts in other fields of science will find the information useful, whether they are in academia, industry, or regulation, or those whose analytical background may be limited.There is also an extensive list of references associated with every chapter to encourage further reading.
Author: J.F. Ziegler
Publisher: Elsevier
ISBN: 0323144012
Category : Science
Languages : en
Pages : 649
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Book Description
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author: Emanuele Rimini
Publisher: Springer Science & Business Media
ISBN: 9780792395201
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author: Michael Nastasi
Publisher: Springer Science & Business Media
ISBN: 3540452982
Category : Science
Languages : en
Pages : 271
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Book Description
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
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Category : Aeronautics
Languages : en
Pages : 1102
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Category : Patents
Languages : en
Pages : 1134
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Author: Holden G Ed
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Languages : en
Pages :
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Category : Aeronautics
Languages : en
Pages : 1142
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Author: James F. Ziegler
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Languages : en
Pages :
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