Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts

Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts PDF Author: Alireza Salehi
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Category :
Languages : en
Pages :

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Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts

Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts PDF Author: Alireza Salehi
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contracts

Radiation Damage and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contracts PDF Author: Alireza Salehi
Publisher:
ISBN:
Category :
Languages : en
Pages : 368

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Radiation and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts

Radiation and Thermal Treatment of Indium Tin Oxide (ITO) Films and Rectifying Contacts PDF Author: Alireza Salehi
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Preparation and Post-Annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films

Preparation and Post-Annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films PDF Author: Rongxin Wang
Publisher: Open Dissertation Press
ISBN: 9781361207796
Category :
Languages : en
Pages :

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This dissertation, "Preparation and Post-annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films" by Rongxin, Wang, 王榮新, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled PREPARATION AND POST-ANNEALING EFFECTS ON THE OPTICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS Submitted by WANG Rong Xin for the degree of Doctor of Philosophy at The University of Hong Kong in April 2005 Many opto-electronic devices, such as III-V compound devices, liquid crystal displays, solar cells, organic and inorganic light emitting devices, and ultraviolet photodetectors, demand transparent electrode materials simultaneously having high electrical conductance. To meet the requirements for particular applications, a great deal of basic research and studies have been carried out on the electrical and optical properties of these materials. As a most promising candidate for such materials, indium tin oxide (ITO) has attracted interest in recent years. Furthermore, ITO has many unique properties such as excellent adhesion on the substrate, thermal stability and ease of patterning. The deposition of high-quality ITO thin films is a key step for successful application of ITO thin films as transparent electrode materials. To obtain optimal electrical and optical properties of ITO films, the growth parameters and conditions must be determined. Moreover, the optical and electrical properties of ITO contact layers, which can either be on the top side or the bottom side of a device, are influenced by various post-deposition treatments. For the present work, ITO thin films were deposited on glass and quartz substrates using e-beam evaporation with different deposition rates. The influence of substrate material, deposition rate, deposition gas environment and post-deposition annealing on the optical properties of the films was investigated in detail. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy was employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the substrate material, deposition rate, deposition gas environment and post-deposition annealing conditions strongly affect the chemical composition and the microstructure of the ITO films and these in turn influence the optical properties of the film. Oxygen incorporation transfers the In O phase to the In O phase and removes metallic In to form both indium oxide 2 3-x 2 3 phases. Both of these reactions are beneficial for the optical transmittance of ITO thin films. Moreover, it was found that the incorporation and decomposition reactions of oxygen can be controlled so as to change the optical properties of the ITO thin films reversibly. DOI: 10.5353/th_b3154617 Subjects: Thin films - Optical properties Indium compounds Annealing of metals

Optical and Electrical Properties of Indium Tin Oxide Films Near Their Laser Damage Threshold [Electrical and Optical Properties of Indium Tin Oxide Films Under Multi-pulse Laser Irradiation at 1064 Nm].

Optical and Electrical Properties of Indium Tin Oxide Films Near Their Laser Damage Threshold [Electrical and Optical Properties of Indium Tin Oxide Films Under Multi-pulse Laser Irradiation at 1064 Nm]. PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 10

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In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performance degradation.

Indium Tin Oxide (ITO) Deposition, Patterning, and Schottky Contact Fabrication

Indium Tin Oxide (ITO) Deposition, Patterning, and Schottky Contact Fabrication PDF Author: Jianming Zhou
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 152

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"As a transparent conductive material, indium tin oxide (ITO) has been utilized as electrodes in liquid crystal displays, solar cells, heat reflecting films and gas sensors. In general, the desired properties are high conductance and transmission. However, due to the complexity of ITO, the film properties strongly depend on the deposition processes. In this study, the deposition conditions for ITO film were optimized to get both high conductivity and transmission. The emphasis was on investigating the effects of various deposition parameters, such as oxygen partial pressure, total gas flow, annealing conditions and power. These are the most critical parameters for ITO deposition. A mathematical model to describe the material properties as functions of these parameters for a CVC model 601 Sputterer was developed utilizing JMP IN software. Films with resistivity 3x10-4[omega]-cm and transmittance above 90% were achieved on glass and silicon substrates with 20 hours of annealing. The processing window (power: 120-150W, oxygen ratio: 6-10%) is, to the author's knowledge, the largest reported by literature. However, the ITO film properties (electrical and optical) variation between runs needs to be further reduced. Patterning of ITO was also investigated. High but controllable etch rates are desired. Both wet and dry etch processes were developed. The etch rate of 48nm/min was achieved by using HCL aqueous solution (4:1 HCl to DI water volumetric ratio, where HCl is the standard 37% HCl solution) with almost infinite selectivity between the ITO film and the photoresisit. For dry etch, the etch rate is 1nm/min with just argon as the working gas and the etching selectivity between the photoresist and the ITO film is 13.02. To etch 100nm ITO film, the photoresist needs to be at least 1.5um to serve as etching mask. This dry etch process still needs to be improved. A Schottky contact was successfully fabricated by using ITO as the metal. The electrical barrier height was calculated to be 1.01eV. The current-voltage characteristics were investigated as well"--Abstract.

Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards

Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 494

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Theses on any subject submitted by the academic libraries in the UK and Ireland.

Physics Briefs

Physics Briefs PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1162

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Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304

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Chemically Deposited Nanocrystalline Metal Oxide Thin Films

Chemically Deposited Nanocrystalline Metal Oxide Thin Films PDF Author: Fabian I. Ezema
Publisher: Springer Nature
ISBN: 3030684628
Category : Technology & Engineering
Languages : en
Pages : 926

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Book Description
This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.