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Author: Cristiano Calligaro
Publisher: CRC Press
ISBN: 1000793060
Category : Technology & Engineering
Languages : en
Pages : 417
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Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies
Author: Cristiano Calligaro
Publisher: CRC Press
ISBN: 1000793060
Category : Technology & Engineering
Languages : en
Pages : 417
Get Book Here
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies
Author: Calligaro, Cristiano
Publisher: River Publishers
ISBN: 8770220204
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1466560614
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: Eitan N. Shauly
Publisher: CRC Press
ISBN: 1000631354
Category : Technology & Engineering
Languages : en
Pages : 831
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Book Description
Nowadays over 50% of integrated circuits are fabricated at wafer foundries. This book presents a foundry-integrated perspective of the field and is a comprehensive and up-to-date manual designed to serve process, device, layout, and design engineers. It comprises chapters carefully selected to cover topics relevant for them to deal with their work. The book provides an insight into the different types of design rules (DRs) and considerations for setting new DRs. It discusses isolation, gate patterning, S/D contacts, metal lines, MOL, air gaps, and so on. It explains in detail the layout rules needed to support advanced planarization processes, different types of dummies, and related utilities as well as presents a large set of guidelines and layout-aware modeling for RF CMOS and analog modules. It also discusses the layout DRs for different mobility enhancement techniques and their related modeling, listing many of the dedicated rules for static random-access memory (SRAM), embedded polyfuse (ePF), and LogicNVM. The book also provides the setting and calibration of the process parameters set and describes the 28~20 nm planar MOSFET process flow for low-power and high-performance mobile applications in a step-by-step manner. It includes FEOL and BEOL physical and environmental tests for qualifications together with automotive qualification and design for automotive (DfA). Written for the professionals, the book belongs to the bookshelf of microelectronic discipline experts.
Author: Andrea Baschirotto
Publisher: Springer Nature
ISBN: 3030252671
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
This book is based on the 18 tutorials presented during the 28th workshop on Advances in Analog Circuit Design. Expert designers present readers with information about a variety of topics at the frontier of analog circuit design, including next-generation analog-to-digital converters , high-performance power management systems and technology considerations for advanced IC design. For anyone involved in analog circuit research and development, this book will be a valuable summary of the state-of-the-art in these areas. Provides a summary of the state-of-the-art in analog circuit design, written by experts from industry and academia; Presents material in a tutorial-based format; Includes coverage of next-generation analog-to-digital converters, high-performance power management systems, and technology considerations for advanced IC design.
Author: Sergio Saponara
Publisher: Springer Nature
ISBN: 3030372774
Category : Technology & Engineering
Languages : en
Pages : 524
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Book Description
This book provides a thorough overview of cutting-edge research on electronics applications relevant to industry, the environment, and society at large. It covers a broad spectrum of application domains, from automotive to space and from health to security, while devoting special attention to the use of embedded devices and sensors for imaging, communication and control. The book is based on the 2019 ApplePies Conference, held in Pisa, Italy in September 2019, which brought together researchers and stakeholders to consider the most significant current trends in the field of applied electronics and to debate visions for the future. Areas addressed by the conference included information communication technology; biotechnology and biomedical imaging; space; secure, clean and efficient energy; the environment; and smart, green and integrated transport. As electronics technology continues to develop apace, constantly meeting previously unthinkable targets, further attention needs to be directed toward the electronics applications and the development of systems that facilitate human activities. This book, written by industrial and academic professionals, represents a valuable contribution in this endeavor.
Author: Maurice H. Francombe
Publisher: Academic Press
ISBN: 1483288927
Category : Science
Languages : en
Pages : 415
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Book Description
Mechanic and Dielectric Properties deals with the mechanical and dielectric properties of thin films. Topics covered range from the deposition and mechanical properties of superlattice thin films to the preparation of hard coatings by sputtering and arc evaporation. The use of thin films in microwave acoustics is also discussed, along with ferroelectric films for integrated electronics and the physics, chemistry, and technology of electrochromic tungsten-oxide-based thin films. Comprised of five chapters, this volume begins with an analysis of the growth, characterization, and mechanical behavior of films comprising multilayers primarily of metal and refractory metallic compound components. The next chapter reviews the mechanical properties of hard coatings prepared by sputtering and arc evaporation, together with the influence of multilayer and gradient structures, and of film crystallinity, crystal orientation, and morphology, on properties such as hardness, coating smoothness, and friction behavior. Subsequent chapters focus on the unique role played by piezoelectric films in signal processing devices utilizing bulk or surface acoustic waves; the properties and applications of ferroelectric films in integrated electronics; and the underlying physics and chemistry of electrochromic tungsten-oxide-based thin films. This book should be of interest to physicists.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 846
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Book Description
Author:
Publisher: DIANE Publishing
ISBN: 9781568066059
Category : Technology & Engineering
Languages : en
Pages : 234
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Book Description
Provides a summary of the projects the Air Force MANTECH Directorate has in progress or has completed within the last 10 years. Its purpose is to promote the transfer of technology which was developed through these investments into the defense industrial base.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1439826951
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
