Quasi-hydrodynamic Semiconductor Equations PDF Download
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Author: Ansgar Jüngel
Publisher: Springer Science & Business Media
ISBN: 9783764363499
Category : Mathematics
Languages : en
Pages : 314
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Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author: Ansgar Jüngel
Publisher: Springer Science & Business Media
ISBN: 9783764363499
Category : Mathematics
Languages : en
Pages : 314
Get Book Here
Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
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Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author: Shinya Nishibata
Publisher: World Scientific
ISBN: 9784931469662
Category : Mathematics
Languages : en
Pages : 0
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Book Description
This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations among these models. The model hierarchy has been formally understood by relaxation limits letting the physical parameters, called relaxation times, tend to zero. The main concern of this volume is the mathematical justification of the relaxation limits. Precisely, we show that the time global solution for the hydrodynamic model converges to that for the energy-transport model as a momentum relaxation time tends to zero. Moreover, it is shown that the solution for the energy-transport model converges to that for the drift-diffusion model as an energy relaxation time tends to zero. For beginners' help, this volume also presents the physical background of the semiconductor devices, the derivation of the models, and the basic mathematical results such as the unique existence of time local solutions.Published by Mathematical Society of Japan and distributed by World Scientific Publishing Co. for all markets
Author: Ansgar Jüngel
Publisher: Springer
ISBN: 3540895264
Category : Science
Languages : en
Pages : 326
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Book Description
Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.
Author: Catherine Bandle
Publisher: Springer Science & Business Media
ISBN: 3764373849
Category : Mathematics
Languages : en
Pages : 466
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Book Description
Haim Brezis has made significant contributions in the fields of partial differential equations and functional analysis, and this volume collects contributions by his former students and collaborators in honor of his 60th anniversary at a conference in Gaeta. It presents new developments in the theory of partial differential equations with emphasis on elliptic and parabolic problems.
Author: Yong Shi
Publisher: Springer
ISBN: 3540725849
Category : Computers
Languages : en
Pages : 1310
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Book Description
Part of a four-volume set, this book constitutes the refereed proceedings of the 7th International Conference on Computational Science, ICCS 2007, held in Beijing, China in May 2007. The papers cover a large volume of topics in computational science and related areas, from multiscale physics to wireless networks, and from graph theory to tools for program development.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Giuseppe Nicosia
Publisher: Springer Nature
ISBN: 3030441016
Category : Mathematics
Languages : en
Pages : 288
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Book Description
This collection of selected papers presented at the 12th International Conference on Scientific Computing in Electrical Engineering, SCEE 2018, held in Taormina, Sicily, Italy, in September 2018, showcases the state of the art in SCEE. The aim of the SCEE 2018 conference was to bring together scientists from academia and industry, mathematicians, electrical engineers, computer scientists, and physicists, and to promote intensive discussions on industrially relevant mathematical problems, with an emphasis on the modeling and numerical simulation of electronic circuits and of electromagnetic fields. This extensive reference work is divided into five parts: Computational Electromagnetics, Device Modeling and Simulation, Circuit Simulation, Mathematical and Computational Methods, Model Order Reduction. Each part starts with a general introduction, followed by the respective contributions. The book will appeal to mathematicians and electrical engineers. Further, it introduces algorithm and program developers to recent advances in the other fields, while industry experts will be introduced to new programming tools and mathematical methods.
Author: Sylvie Benzoni-Gavage
Publisher: Springer Science & Business Media
ISBN: 3540757120
Category : Mathematics
Languages : en
Pages : 1117
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Book Description
This volume contains papers that were presented at HYP2006, the eleventh international Conference on Hyperbolic Problems: Theory, Numerics and Applications. This biennial series of conferences has become one of the most important international events in Applied Mathematics. As computers became more and more powerful, the interplay between theory, modeling, and numerical algorithms gained considerable impact, and the scope of HYP conferences expanded accordingly.
Author: Roberto Monaco
Publisher: World Scientific
ISBN: 981238748X
Category : Science
Languages : en
Pages : 590
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Book Description
This book contains about 20 invited papers and 40 contributed papers in the research areas of theoretical continuum mechanics, kinetic theory and numerical applications of continuum mechanics. Collectively these papers give a good overview of the activities and developments in these fields in the last few years.The proceedings have been selected for coverage in: ? Index to Scientific & Technical Proceedings? (ISTP? / ISI Proceedings)? Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)? CC Proceedings ? Engineering & Physical Sciences
