Author: Timo Sammet
Publisher:
ISBN:
Category : Copper
Languages : en
Pages : 192

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Book Description

Author: Dojun Kim
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
ABSTRACT: The ternary material WN[subscript x]C[subscript y] was investigated for Cu diffusion barrier application. Thin films were deposited from tungsten diorganohydrazido(2- ) complexes Cl4(CH3CN)W(NNR22) (1: R2=-(CH2)5-; 2: R2=Ph2; 3: R22=Me2) using metal-organic aerosol-assisted CVD. The films deposited from these novel precursors were characterized for their composition, bonding state, structure, resistivity, and barrier quality. WN[subscript x]C[subscript y] films from 1, 2 and 3 were successfully deposited in the absence and the presence of NH3 in H2 carrier in the temperature range 300 to 700 °C. All WN[subscript x]C[subscript y] films contained W, N, C, and a small amount of O as determined by XPS. The Cl content of the film was below the XPS detection limit (~ 1 at. %). The chemical composition of films deposited with 1 in H2/NH3 exhibited increased N levels and decreased C levels over the entire temperature range of this study as compared with to films deposited 1 in H2. As determined by XPS, W is primarily bonded to N and C for films deposited at 400 C, but at lower deposition temperature the binding energy of the W-O bond becomes more evident. The films deposited at 400 °C were X-ray amorphous and Cu/WN[subscript x]C[subscript y]/Si stacks annealed under N2 at 500 °C for 30 min maintained the integrity of both the Cu/WN[subscript x]C[subscript y] and WN[subscript x]C[subscript y]/Si interfaces.

Author: Yeeli Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 96

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Book Description

Author: Chris R. Kleijn
Publisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138

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Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.

Author: Jonathan Cole Backlund
Publisher:
ISBN:
Category :
Languages : en
Pages : 48

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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 356

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Book Description
"Education, arts and social sciences, natural and technical sciences in the United States and Canada".

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 8

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Book Description
A low pressure chemical vapor deposition (LPCVD) process for depositing W{sub X}B{sub (1-X)} films from WF6 and B2H6 is described. The depositions were performed in a cold wall reactor on 6 in. Si wafers at 400C. During deposition, pressure was maintained at a fixed level in the range of 200 to 260 mTorr. Ratio of WF6/B2H6 was varied from 0.05 to 1.07. Carrier gas was either 100 sccm of Ar with a gas flow of 308 to 591 sccm, or 2000 sccm of Ar and 2000 sccm of H2 with the overall gas flow from 4213 to 4452 sccm. Two stable deposition regions were found separated by an unstable region that produced non-uniform films. The B-rich films produced in one of the stable deposition regions had W concentrations of 30 at.% and resistivities between 200 and 300 [mu]ohm·cm. The W-rich films produced in the other stable deposition region had W concentrations of 80 at.% and resistivities of 100 [mu]ohm·cm. As-deposited films had densities similar to bulk material of similar stoichiometry. Barrier properties of the films against diffusion of Cu to 700C in vacuum were measured by 4-point probe. Also, annealing was carried out to 900C in order to determine phases formed as the films crystallize. These studies indicate that W{sub X}B{sub (1-X)} films may be useful barriers in ULSI metallization applications.

Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266

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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2676

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Book Description

Author: Peter M. Martin
Publisher: William Andrew
ISBN: 0815520328
Category : Technology & Engineering
Languages : en
Pages : 932

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Book Description
This 3e, edited by Peter M. Martin, PNNL 2005 Inventor of the Year, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. This long-awaited revision includes updated and new chapters on atomic layer deposition, cathodic arc deposition, sculpted thin films, polymer thin films and emerging technologies. Extensive material was added throughout the book, especially in the areas concerned with plasma-assisted vapor deposition processes and metallurgical coating applications.