Properties of III-V Quantum Wells and Superlattices PDF Download
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Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Science
Languages : en
Pages : 238
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Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Science
Languages : en
Pages : 238
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Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Author: E.E. Mendez
Publisher: Springer Science & Business Media
ISBN: 1468454781
Category : Science
Languages : en
Pages : 456
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Book Description
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Author: Fernando Agullo-rueda
Publisher: World Scientific
ISBN: 9814501255
Category : Science
Languages : en
Pages : 269
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Book Description
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
Author:
Publisher: Academic Press
ISBN: 0080864643
Category : Science
Languages : en
Pages : 257
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Book Description
Intersubband Transitions in Quantum Wells: Physics and Device Applications II
Author: Kompa, Günter
Publisher: kassel university press GmbH
ISBN: 3862195414
Category : Compound semiconductors
Languages : en
Pages : 762
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Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author: Gerald Bastard
Publisher: EDP Sciences
ISBN:
Category : Science
Languages : en
Pages : 372
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Book Description
Examines the basic electronic and optical properties of two- dimensional semiconductor heterostructures based on III-V and II-VI compounds. Explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, it discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light.
Author: Alfred R. Adams
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 150
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Book Description
Author: Paul Harrison
Publisher: John Wiley & Sons
ISBN: 0470010819
Category : Science
Languages : en
Pages : 511
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Book Description
Quantum Wells, Wires and Dots Second Edition: Theoretical andComputational Physics of Semiconductor Nanostructures providesall the essential information, both theoretical and computational,for complete beginners to develop an understanding of how theelectronic, optical and transport properties of quantum wells,wires and dots are calculated. Readers are lead through a series ofsimple theoretical and computational examples giving solidfoundations from which they will gain the confidence to initiatetheoretical investigations or explanations of their own. Emphasis on combining the analysis and interpretation ofexperimental data with the development of theoretical ideas Complementary to the more standard texts Aimed at the physics community at large, rather than just thelow-dimensional semiconductor expert The text present solutions for a large number of realsituations Presented in a lucid style with easy to follow steps related toaccompanying illustrative examples
Author: Igor Vurgaftman
Publisher:
ISBN: 0198767277
Category : Science
Languages : en
Pages : 689
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Book Description
This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.
Author: Institute of Physics Conference
Publisher: CRC Press
ISBN: 1000112292
Category : Science
Languages : en
Pages : 1345
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Book Description
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
