Properties of Gallium Arsenide Diode Lasers PDF Download
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Author: Christian Deutsch
Publisher:
ISBN:
Category :
Languages : en
Pages : 16
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Book Description
Author: Christian Deutsch
Publisher:
ISBN:
Category :
Languages : en
Pages : 16
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Book Description
Author: Christian Deutsch
Publisher:
ISBN:
Category :
Languages : de
Pages :
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Book Description
Author: M. R. Brozel
Publisher: Inst of Engineering & Technology
ISBN: 9780852968857
Category : Technology & Engineering
Languages : en
Pages : 981
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Book Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author: C. H. Gooch
Publisher: John Wiley & Sons
ISBN:
Category : Science
Languages : en
Pages : 356
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Book Description
Author:
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 304
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Book Description
Author: United States. National Aeronautics and Space Administration
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages : 304
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Book Description
Author: Richard Walter Gray
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 96
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Book Description
Author: John Sydney Blakemore
Publisher: Springer Science & Business Media
ISBN: 9780883185254
Category : Gallium arsenide
Languages : en
Pages : 422
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Author: John Evan Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages : 202
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Book Description
Author: Thorben Kaul
Publisher: Cuvillier Verlag
ISBN: 3736963963
Category : Science
Languages : en
Pages : 136
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Book Description
This work presents progress in the root-cause analysis of power saturation mechanisms in continuous wave (CW) driven GaAs-based high-power broad area diode lasers operated at 935 nm. Target is to increase efficiency at high optical CW powers by epitaxial design. The novel extreme triple asymmetric (ETAS) design was developed and patented within this work to equip diode lasers that use an extremely thin p-waveguide with a high modal gain. An iterative variation of diode lasers employing ETAS designs was used to experimentally clarify the impact of modal gain on the temperature dependence of internal differential quantum efficiency (IDQE) and optical loss. High modal gain leads to increased free carrier absorption from the active region. However, less power saturation is observed, which must then be attributed to an improved temperature sensitivity of the IDQE. The effect of longitudinal spatial hole burning (LSHB) leads to above average non-linear carrier loss at the back facet of the device. At high CW currents the junction temperature rises. Therefore, not only the asymmetry of the carrier profile increases but also the average carrier density in order to compensate for the decreased material gain and increased threshold gain. This carrier non-pinning effect above threshold is found in this work to enhance the impact of LSHB already at low currents, leading to rapid degradation of IDQE with temperature. This finding puts LSHB into a new context for CW-driven devices as it emphasizes the importance of low carrier densities at threshold. The carrier density was effectively reduced by applying the novel ETAS design. This enabled diode lasers to be realized that show minimized degradation of IDQE with temperature and therefore improved performance in CW operation.
