Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy PDF Download
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Author: John Condon Bean
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 478
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Book Description
Author: John Condon Bean
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 478
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Book Description
Author: International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, Toronto
Publisher:
ISBN:
Category :
Languages : en
Pages : 455
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Book Description
Author: International Symposium on Silicon Molecular Beam
Publisher:
ISBN: 9780608057255
Category :
Languages : en
Pages : 465
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Book Description
Author: John Condon Bean
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 682
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Book Description
Author: John C.. Bean
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 619
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Book Description
Author: E. Kasper
Publisher: CRC Press
ISBN: 1351085077
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author:
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ISBN:
Category :
Languages : en
Pages :
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Author: Erich Kasper
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 484
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Book Description
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
