Proceedings of the 14th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 27-29 January 1987, the Westin Hotel Utah, Salt Lake City, Utah PDF Download
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Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 408
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Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 408
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Author: T. C. McGill
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 450
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Book Description
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author: Guy LeLay
Publisher: Springer Science & Business Media
ISBN: 3642729673
Category : Science
Languages : en
Pages : 399
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Book Description
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 390
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Book Description
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 272
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Book Description
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 296
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Book Description
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 792
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Author: H. J. von Bardeleben
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 706
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Book Description
Proceedings of the 14th International Conference on Defects in Semiconductors (ICDS-14), Paris, France, 1986
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566773539
Category : Technology & Engineering
Languages : en
Pages : 180
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Book Description
