Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies PDF Download
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Author: Michael Fulde
Publisher: Springer Science & Business Media
ISBN: 9048132800
Category : Technology & Engineering
Languages : en
Pages : 131
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Book Description
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Author: Michael Fulde
Publisher: Springer Science & Business Media
ISBN: 9048132800
Category : Technology & Engineering
Languages : en
Pages : 131
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Book Description
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Author: Serge Pierfederici
Publisher: Springer Nature
ISBN: 3031248376
Category : Technology & Engineering
Languages : en
Pages : 617
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Book Description
This book collects a selection of papers presented at ELECTRIMACS 2021, the 14th international conference of the IMACS TC1 Committee, held in Nancy, France, on 16th-19th May 2022. The conference papers deal with modelling, simulation, analysis, control, power management, design optimization, identification and diagnostics in electrical power engineering. The main application fields include electric machines and electromagnetic devices, power electronics, transportation systems, smart grids, renewable energy systems, energy storage like batteries and supercapacitors, fuel cells, and wireless power transfer. The contributions included in Volume 1 will be particularly focused on electrical engineering simulation aspects and innovative applications.
Author: Tomasz Brozek
Publisher: CRC Press
ISBN: 1351831348
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Author: Gian-Franco Dalla Betta
Publisher: BoD – Books on Demand
ISBN: 953307163X
Category : Technology & Engineering
Languages : en
Pages : 482
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Book Description
Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.
Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1566777445
Category : Integrated circuits
Languages : en
Pages : 547
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Book Description
ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Author: Troy Farncombe
Publisher: CRC Press
ISBN: 1351831755
Category : Science
Languages : en
Pages : 857
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Book Description
The book has two intentions. First, it assembles the latest research in the field of medical imaging technology in one place. Detailed descriptions of current state-of-the-art medical imaging systems (comprised of x-ray CT, MRI, ultrasound, and nuclear medicine) and data processing techniques are discussed. Information is provided that will give interested engineers and scientists a solid foundation from which to build with additional resources. Secondly, it exposes the reader to myriad applications that medical imaging technology has enabled.
Author: Yasuhisa Omura
Publisher: The Electrochemical Society
ISBN: 1566778662
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This is the continuation of the long running ¿Silicon-on-Insulator Technology and Devices¿ symposium. The issue of ECS Transactions covers recent significant advances in SOI technologies, SOI-based nanoelectronics and innovative applications including scientific interests. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers and scientists.
Author: E. P. Gusev
Publisher: The Electrochemical Society
ISBN: 1566777917
Category : Science
Languages : en
Pages : 426
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Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author: T.S. Srivatsan
Publisher: CRC Press
ISBN: 1498714781
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Get Ready for the Future of Additive ManufacturingAdditive Manufacturing: Innovations, Advances, and Applications explores the emerging field of additive manufacturing (AM)-the use of 3D printing to make prototype parts on demand. Often referred to as the third industrial revolution, AM offers many advantages over traditional manufacturing. This pr
Author: François Triozon
Publisher: John Wiley & Sons
ISBN: 111876188X
Category : Technology & Engineering
Languages : en
Pages : 341
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Book Description
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
