Author: J. Fournier
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
A simple novel horizontal reactor was used to prepare 2000 angstrom films of alumina on silicon substrates by the thermal decomposition of aluminum tri isopropoxide at temperatures between 350 and 500 C. The films were annealed in oxygen to test suitability towards shrinkage and were characterized as to porosity, the presence of OH absorption bands in the infrared transmittance spectra and breakdown voltage. Keywords: Material index; Alumina tri-isopropoxide; Silicon.
Preparation and Characterization of Thin Films of Alumina by Metalorganic Chemical Vapor Deposition
Author: J. Fournier
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
A simple novel horizontal reactor was used to prepare 2000 angstrom films of alumina on silicon substrates by the thermal decomposition of aluminum tri isopropoxide at temperatures between 350 and 500 C. The films were annealed in oxygen to test suitability towards shrinkage and were characterized as to porosity, the presence of OH absorption bands in the infrared transmittance spectra and breakdown voltage. Keywords: Material index; Alumina tri-isopropoxide; Silicon.
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
A simple novel horizontal reactor was used to prepare 2000 angstrom films of alumina on silicon substrates by the thermal decomposition of aluminum tri isopropoxide at temperatures between 350 and 500 C. The films were annealed in oxygen to test suitability towards shrinkage and were characterized as to porosity, the presence of OH absorption bands in the infrared transmittance spectra and breakdown voltage. Keywords: Material index; Alumina tri-isopropoxide; Silicon.
Studies of Aluminum Oxide Thin Films
Author: Kenneth Michael Gustin
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 656
Book Description
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 656
Book Description
Metal Organic Chemical Vapor Deposition (MOCVD) of Thin Films of Aluminum Oxide and Aluminum Nitride on an Alumina Substrate
Author: Cristian Antonio Soto Lenz
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 368
Book Description
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 368
Book Description
Characterization of the Sol-gel and MOCVD Processes for the Deposition of Aluminum Oxide Thin Films
Author: Mark Joseph Waner
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 178
Book Description
Publisher:
ISBN:
Category : Aluminum oxide
Languages : en
Pages : 178
Book Description
Preparation and Characterization of Alumina Thin Films and Preparation and Characterization of Copper(II) Oxide
Author: William Joseph DeSisto
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Structure and Properties of Metal and Alloy Thin Films Prepared by Plasma-enchanced Metalorganic Chemical Vapor Deposition
Author: Tyau-Jeen Lin
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
Book Description
Growth of Crystalline Alumina and Titanium-oxynitride Thin Films by Metalorganic Chemical Vapor Deposition
Author: Siddhartha Kumar Pradhan
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Metal Oxides for Non-volatile Memory
Author: Panagiotis Dimitrakis
Publisher: Elsevier
ISBN: 0128146303
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Publisher: Elsevier
ISBN: 0128146303
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Technical Reports Awareness Circular : TRAC.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 556
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 556
Book Description