Plasma-Enhanced Atomic Layer Deposition of Boron Carbide for Interconnect Applications PDF Download
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Author: Lauren Mikal Dorsett
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 94
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Book Description
As the semiconductor industry endeavors to scale integrated circuit dimensions-- decreasing layer thicknesses while increasing the aspect ratio of fillable features--the need for novel interconnect materials with highly specialized properties continues to rise. Meeting the requirements for the numerous types of materials needed, including low-k dielectrics, etch stops, metal diffusion barriers, hardmasks, spacer layers, and other pattern-assist layers, with traditional silicon-based materials is becoming increasingly challenging. As an alternative to silicon, amorphous hydrogenated boron carbide (a BC:H), grown through plasma-enhanced chemical vapor deposition (PECVD), has been demonstrated to possess excellent dielectric properties, combined with very high Young's modulus, electrical properties rivaling those of SiOC:H variants, very good chemical stability, and unique and useful etch chemistry. However, a problem with PECVD growth that will limit its long-term utility is its inability to scale while maintaining uniform, conformal coatings for very thin films. To combat the issues arising from PECVD grown boron carbide, a plasma enhanced molecular-layer-deposition-based process for the growth of BC films on metal (copper) substrates using solid carborane precursors was proposed. This thesis describes the design and construction of a reactor chamber capable of this hypothesized film growth as well as the characterization of those preliminary depositions. Monolayer carborane growths on copper substrates were demonstrated with characterization including in situ spectroscopic ellipsometry, as well as ex situ contact angle analysis and X-ray photoelectron spectroscopy. The surface of the monolayer was then plasma treated and preliminary multi-layer growths were tested.
Author: Lauren Mikal Dorsett
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 94
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Book Description
As the semiconductor industry endeavors to scale integrated circuit dimensions-- decreasing layer thicknesses while increasing the aspect ratio of fillable features--the need for novel interconnect materials with highly specialized properties continues to rise. Meeting the requirements for the numerous types of materials needed, including low-k dielectrics, etch stops, metal diffusion barriers, hardmasks, spacer layers, and other pattern-assist layers, with traditional silicon-based materials is becoming increasingly challenging. As an alternative to silicon, amorphous hydrogenated boron carbide (a BC:H), grown through plasma-enhanced chemical vapor deposition (PECVD), has been demonstrated to possess excellent dielectric properties, combined with very high Young's modulus, electrical properties rivaling those of SiOC:H variants, very good chemical stability, and unique and useful etch chemistry. However, a problem with PECVD growth that will limit its long-term utility is its inability to scale while maintaining uniform, conformal coatings for very thin films. To combat the issues arising from PECVD grown boron carbide, a plasma enhanced molecular-layer-deposition-based process for the growth of BC films on metal (copper) substrates using solid carborane precursors was proposed. This thesis describes the design and construction of a reactor chamber capable of this hypothesized film growth as well as the characterization of those preliminary depositions. Monolayer carborane growths on copper substrates were demonstrated with characterization including in situ spectroscopic ellipsometry, as well as ex situ contact angle analysis and X-ray photoelectron spectroscopy. The surface of the monolayer was then plasma treated and preliminary multi-layer growths were tested.
Author: Ana Londergan
Publisher: The Electrochemical Society
ISBN: 1566775426
Category : Atomic layer deposition
Languages : en
Pages : 300
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Book Description
This issue gives an overview of the cutting edge research in the various areas where Atomic Layer Deposition (ALD) can be used, enabling the identification of issues, challenges, and areas where further research is needed. Contributions include: Memory applications, Interconnects and contacts, ALD Productivity enhancement and precursor development, ALD for optical and photonic applications, and Applications in other areas, such as MEMs, nanotechnology, fabrication of sensors and catalysts, etc.
Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1607688522
Category : Science
Languages : en
Pages : 83
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Book Description
Author: Sachin Sharma
Publisher: Linköping University Electronic Press
ISBN: 9180755224
Category :
Languages : en
Pages : 81
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Book Description
Thin films of Boron Nitride (BN) and Boron Carbide (BC) possess properties that make them attractive for various applications. Epitaxially grown BN exhibits potential for optoelectronic devices, as piezoelectric materials, and graphene technology. Epitaxial BC is a semiconductor that could allow bandgap tuning and has potential applications in thermoelectric and optoelectronic devices. Both BN and BC material systems, generally deposited using chemical vapour deposition (CVD), are limited by the lack of control in depositing epitaxial films. In my thesis work, I have studied the evolution of various crystal phases of BN and BC and the factors that affect them during their CVD processes. I deposited and compared the growth of BN on Al2O3 (0001), (11 2 over bar 0), (1 1 over bar 02) and (10 1 over bar 0) substrates and used two organoboranes as boron precursors. Only Al2O3(11 2 over bar 0) and Al2O3 (0001) rendered crystalline films while the BN growth on the remaining substrates was X-ray amorphous. Furthermore, the less investigated Al2O3(11 2 over bar 0) had better crystalline quality versus the commonly used Al2O3 (0001). To further understand this, I studied crystalline BN thin films on an atomic scale and with a time evolution approach, uncovering the influence of carbon on hexagonal BN (h-BN). I showed that h-BN nucleates on both substrates but then either polytype transforms to rhombohedral-BN (r-BN) in stages, turns to less ordered turbostratic-BN or is terminated. An increase in local carbon content is the cause of these changes in epitaxial BN films during CVD. From the time evolution, we studied the effect of Al2O3 modification on h-BN nucleation during CVD. The interaction between boron and carbon during BN growth motivated studies also on the BxC materials. BxC was deposited using CVD at different temperatures on 4H-SiC(0001) (Si-face) and 4H-SiC(000 1 over bar) (C-face) substrates. Epitaxial rhombohedral-B4C (r-B4C) grew at 1300 °C on the C-face while the films deposited on the Si-face were polycrystalline. Comparing the initial nucleation layers on both 4H-SiC substrates on an atomic scale we showed that no interface phenomena are affecting epitaxial r-B4C growth conditions. We suggest that the difference in surface energy on the two substrate surfaces is the most plausible reason for the differences in epitaxial r-B4C growth conditions. In this thesis work, I identify the challenges and propose alternative routes to synthesise epitaxial BN and B4C materials using CVD. This fundamental materials science work enhances the understanding of growing these material systems epitaxially and in doing so furthers their development.
Author: Mirzojamshed Mirzokarimov
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Boron carbide semiconductor devices have a range of applications. As a neutron voltaic, the device could be used to power deep-space exploratory missions. Instead of the passive dosimetry systems used today, an active solid-state neutron detector could immediately alert workers about radiation hazards. The focus of this thesis is the fabrication of an amorphous boron carbide device by plasma enhanced chemical vapor deposition (PECVD). Isomeric carborane precursors are used to synthesize the amorphous p and n-type layers. Improved operation and handling of the PECVD reactor chamber resulted in a stable plasma capable of increased deposition rate. Therefore, quality and purity of the deposited boron carbide films also increased. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and I-V curve measurements were used to characterize the material and electronic properties of the films and devices. Furthermore, metallization and the creation of ohmic contacts with both the n-type and p-type layers were investigated
Author: Eric Christopher Stevens
Publisher:
ISBN:
Category :
Languages : en
Pages : 215
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Book Description
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Adam James Gildea
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 76
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Book Description
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2692
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1026
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
