Piezoelectric Aluminum Nitride Thin Films by PECVD PDF Download
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Author: Gustavo Sanchez Mathon
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
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Book Description
Polycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as 0001 or 1010, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for 0001 oriented films, while 1010 oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors.
Author: Gustavo Sanchez Mathon
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
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Book Description
Polycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as 0001 or 1010, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for 0001 oriented films, while 1010 oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors.
Author: Adam Kabulski
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages :
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Book Description
Author: John Preston Harman
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages :
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Book Description
Author: Masood Hasheminiasari
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 168
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Book Description
Author: Weiqiu Chen
Publisher: World Scientific
ISBN: 981277016X
Category : Technology & Engineering
Languages : en
Pages : 400
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Book Description
This volume covers important subjects in the field of piezoelectric devices and applications with the latest research on piezoelectricity, acoustic waves, manufacturing technology, and design techniques. It includes up-to-date research and information on materials, new products, technological trends, and design methods of benefit to academics and researchers in the piezoelectric device industry. Contributors to this volume include prominent experts such as Clemens Ruppel of Epcos, Daining Fang of Tsinghua University, Tong-Yi Zhang of University of Science and Technology, Hong Kong, and CS Lam of TXC Corporation. A number of papers have been dedicated to Professor Harry F Tiersten of Resselear Polytechnic Institute, who passed away in 2006, for his contributions to the fundamental theory of piezoelectricity and methods for acoustic wave device analysis.
Author: Michael T. Duffy
Publisher:
ISBN:
Category :
Languages : en
Pages : 139
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Book Description
Piezoelectric films of AlN and GaN were grown on sapphire substrates for use in the generation, propagation, and processing of surface acoustic waves. The films were grown by CVD heteroepitaxy using the metal-organic reactants trimethyl aluminum or trimethyl gallium. Greatest emphasis was placed on optimization of the aluminum nitride-sapphire system as determined by the (1,1,-2,0)AlN/(1,-1,0,2)Al2O3 epitaxial relationship. The films were examined with respect to crystallography, surface topography, optical properties, uniformity, and ease of polishing. A wide range of epitaxial growth temperatures was covered in order to establish optimum conditions for the growth of relatively thick films with minimum surface structure and residual composite strain. The possibility of growing silicon on the same substrate with AlN in a side-by-side configuration was examined and shown to be feasible. Aluminum transducer patterns were fabricated on some samples to form delay lines.
Author:
Publisher:
ISBN:
Category : Microelectromechanical systems
Languages : en
Pages :
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Book Description
Author: Agne Zukauskaite
Publisher: Mdpi AG
ISBN: 9783036563671
Category : Science
Languages : en
Pages : 0
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Book Description
Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to overcome the limitations of AlN thin films in various piezoelectric applications while still enabling us to benefit from all of the advantages of the parent material system, such as a high temperature stability, CMOS compatibility, and good mechanical properties. Potential applications include RF filters (bulk acoustic wave (BAW) or surface acoustic wave (SAW) resonators), energy harvesting, sensing applications, and infra-red detectors. The recent progress in MOCVD- and MBE-grown AlScN has led to high-frequency and -power electronics, (high-electron-mobility transistors (HEMTs)). AlScN is the first wurtzite III-nitride where ferroelectric switching was observed, allowing for many new possible applications in semiconductor memories additionally, it enables the additional functionality of switching to applications where piezoelectric materials are already in use. This Special Issue was very successful in covering all of the main aspects of AlScN research, including its growth, the fundamental and application-relevant properties, and device fabrication and characterization. We can see that AlScN technology is mature enough to be utilized in wafer-level material development and complicated devices, but there is still much to discover in terms of deposition process control, anisotropy, and, in particular, ferroelectric behavior.
Author: Ji Wang
Publisher: World Scientific
ISBN: 9814474851
Category : Technology & Engineering
Languages : en
Pages : 400
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Book Description
This volume covers important subjects in the field of piezoelectric devices and applications with the latest research on piezoelectricity, acoustic waves, manufacturing technology, and design techniques. It includes up-to-date research and information on materials, new products, technological trends, and design methods of benefit to academics and researchers in the piezoelectric device industry. Contributors to this volume include prominent experts such as Clemens Ruppel of Epcos, Daining Fang of Tsinghua University, Tong-Yi Zhang of University of Science and Technology, Hong Kong, and CS Lam of TXC Corporation. A number of papers have been dedicated to Professor Harry F Tiersten of Resselear Polytechnic Institute, who passed away in 2006, for his contributions to the fundamental theory of piezoelectricity and methods for acoustic wave device analysis.
Author: Swetapadma Praharaj
Publisher: CRC Press
ISBN: 1003803849
Category : Technology & Engineering
Languages : en
Pages : 211
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Book Description
This book explains the state-of-the-art green piezoelectric energy harvesting (PEH) technology. It highlights different aspects of PEH, starting right from the materials, their synthesis, and characterization techniques to applications. Various types of materials, including ceramics, polymers, composites, and bio-inspired compounds in nano, micro, and meso scale and their recent advancements are captured in detail with special focus on lead-free systems. Different challenges and issues faced while designing a PEH are also included. Features: Guides on how to harvest piezoelectric energy in a sustainable manner Describes related figures of merit for piezoelectric energy harvesting Covers synthesis of piezoelectric materials in the form of bulk, single crystal, nano, and thin/thick film Includes pertinent advanced characterization techniques Reviews piezo-energy harvesting devices and structures This book is aimed at researchers, professionals, and graduate students in electrical engineering, materials, and energy.
