Physics-based Modeling of Hot-electron Effects in Submicron Semiconductor Devices for CAD Applications PDF Download
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Author: Shiuh-Luen Wang
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 330
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Book Description
Author: Shiuh-Luen Wang
Publisher:
ISBN:
Category : Hot carriers
Languages : en
Pages : 330
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 796
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 660
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Book Description
Author: Peter Elias
Publisher:
ISBN: 9789090063164
Category : Hot carriers
Languages : en
Pages : 136
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Book Description
Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 1461558077
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 532
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Book Description
Author: S. Tucci
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 466
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2092
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Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 116
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Book Description
Author: Manoj Kumar Majumder
Publisher: CRC Press
ISBN: 1000223094
Category : Science
Languages : en
Pages : 350
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Book Description
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
