Physics Based Mdeling of Multiple Gate Transistors on Silicon-on-Insulator (SOI) PDF Download
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 153
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Book Description
G4FET is a novel device built on Silicon-on-Isulator (SOI). Due to the presence of Bulk-Si, it is impossible to have more than one gate for each transistor in conventional process technology. However, it is possible to have multiple gates for each transistor in SOI devices due to the presence of buried oxide, which can be used as an independent gate. Besides the oxide gates, junction gates can also be introduced. Due to the presence of the thin active layer, the junction gate can reach to the bottom and can be used to isolate and control the conduction in the transistors. As a result, the maximum number of gates that can be achieved in SOI is four. A transistor with four gates is called G4FET. G4FET offers all the features of SOI technology. It offers remedies of the drawbacks of Bulk-Si technology. The operation of the multiple gates has applications for mixed-signal circuits, quantum wire, and single transistor multiple gates logic schemes, etc. The research goal is to understand the device physics of G4FET. Understanding device physics will provide enough information to set device parameters to optimize device performances. The operation of semiconductor devices depends on several material parameters, device dimensions and structure. The objective of this research is to develop a model that includes material parameters, device dimensions and structure. The second objective of this research is to develop a numerical model from available data. The numerical model is useful for circuit simulation of G4FET, which provides information about the characteristics of G4FET, when used as a circuit element.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 153
Get Book Here
Book Description
G4FET is a novel device built on Silicon-on-Isulator (SOI). Due to the presence of Bulk-Si, it is impossible to have more than one gate for each transistor in conventional process technology. However, it is possible to have multiple gates for each transistor in SOI devices due to the presence of buried oxide, which can be used as an independent gate. Besides the oxide gates, junction gates can also be introduced. Due to the presence of the thin active layer, the junction gate can reach to the bottom and can be used to isolate and control the conduction in the transistors. As a result, the maximum number of gates that can be achieved in SOI is four. A transistor with four gates is called G4FET. G4FET offers all the features of SOI technology. It offers remedies of the drawbacks of Bulk-Si technology. The operation of the multiple gates has applications for mixed-signal circuits, quantum wire, and single transistor multiple gates logic schemes, etc. The research goal is to understand the device physics of G4FET. Understanding device physics will provide enough information to set device parameters to optimize device performances. The operation of semiconductor devices depends on several material parameters, device dimensions and structure. The objective of this research is to develop a model that includes material parameters, device dimensions and structure. The second objective of this research is to develop a numerical model from available data. The numerical model is useful for circuit simulation of G4FET, which provides information about the characteristics of G4FET, when used as a circuit element.
Author: Md Sakib Hasan
Publisher:
ISBN:
Category : Electronic circuit design
Languages : en
Pages : 183
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Book Description
As the device dimensions have reduced from micrometer to nanometer range, new bulk silicon devices are now facing many undesirable effects of scaling leading device engineers to look for new process technologies. Silicon-on-insulator (SOI) has emerged as a very promising candidate for resolving the major problems plaguing the bulk silicon technology. G4FET [G4FET] is a SOI transistor with four independent gates. Although G4FET has already shown great potential in different applications, the widespread adoption of a technology in circuit design is heavily dependent upon good SPICE (Simulation Program with Integrated Circuit Emphasis) models. CAD (Computer Aided Design) tools are now ubiquitous in circuit design and a fast, robust and accurate SPICE model is absolutely necessary to transform G4FET into a mainstream technology. The research goal is to develop suitable SPICE models for G4FET to aid circuit designers in designing innovative analog and digital circuits using this new transistor. The first phase of this work is numerical modeling of the G4FET where four different numerical techniques are implemented, each with its merits and demerits. The first two methods are based on multivariate Lagrange interpolation and multidimensional Bernstein polynomial. The third numerical technique is based on multivariate regression polynomial to aid modeling with dense gridded data. Another suitable alternative namely multidimensional linear and cubic spline interpolation is explored as the fourth numerical modeling approach to solve some of the problems resulting from single polynomial approximation. The next phase of modeling involves developing a macromodel combining already existing SPICE models of MOSFET (metal-oxide-semiconductor field-effect transistor) and JFET (junction-gate field-effect transistor). This model is easy to implement in circuit simulators and provides good results compared to already demonstrated experimental works with innovative G4FET circuits. The final phase of this work involves the development of a physics-based compact model of G4FET with some empirical fitting parameters. A model for depletion-all-around operation is implemented in circuit simulator based on previous work. Another simplified model, combining MOS and JFET action, is implemented in circuit simulator to model the accumulation mode operation of G4FET.
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 3030045137
Category : Technology & Engineering
Languages : en
Pages : 125
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Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Author: O. Kononchuk
Publisher: Elsevier
ISBN: 0857099256
Category : Technology & Engineering
Languages : en
Pages : 503
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Book Description
Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Jean-Pierre Colinge
Publisher: Cambridge University Press
ISBN: 1107052408
Category : Science
Languages : en
Pages : 269
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Book Description
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Author: Victor Sucasas
Publisher: Springer
ISBN: 3030051951
Category : Computers
Languages : en
Pages : 478
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Book Description
This book constitutes the refereed post-conference proceedings of the 9th International Conference on Broadband Communications, Networks, and Systems, Broadnets 2018, which took place in Faro, Portugal, in September 2018. The 30 revised full and 16 workshop papers were carefully reviewed and selected from 68 submissions. The papers are thematically grouped as follows: Advanced Techniques for IoT and WSNs; SDN and Network Virtualization; eHealth and Telemedicine Mobile Applications; Security and Privacy Preservation; Communication Reliability and Protocols; Spatial Modulation Techniques; Hardware Implementation and Antenna Design.
Author: Benjamin Iniguez
Publisher: World Scientific
ISBN: 9814583200
Category : Technology & Engineering
Languages : en
Pages : 204
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Book Description
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Author: Manjul Bhushan
Publisher: Springer
ISBN: 1493913492
Category : Technology & Engineering
Languages : en
Pages : 431
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Book Description
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.
