Photomodulated Optical Reflectance PDF Download
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Author: Janusz Bogdanowicz
Publisher: Springer Science & Business Media
ISBN: 3642301088
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
Author: Janusz Bogdanowicz
Publisher: Springer Science & Business Media
ISBN: 3642301088
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
Author: Springer
Publisher:
ISBN: 9783642301094
Category :
Languages : en
Pages : 228
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 69
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Book Description
![Quantitative Photomodulated Optical-reflectance Studies of Silicon and Germanium Semiconductors [microform] PDF](https://books.google.com/books/content/images/frontcover/xFAGywAACAAJ?fife=w80-h100)
Author: Robert E. (Robert Edward) Wagner
Publisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612029361
Category :
Languages : en
Pages :
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Book Description
Author: Dane Bicanic
Publisher: Springer
ISBN: 354047269X
Category : Science
Languages : en
Pages : 744
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Book Description
Photoacoustic and Photothermal Phenomena III comprises contributions explaining new topics, relevant theories, novel methods, and the developmentof instrumentation in this active research area - information that is otherwise not available in a single volume. Particular emphasis is placed on the variety of applications of photoacoustic and photothermal techniques in disciplines ranging from environmental, agricultural, medical, and biological sciences to spectroscopy, nondestructive evaluation, materials characterization, heat and mass transfer, kinetics (including ultrafast phenomena), and solid-state and surface physics. This volume provides an excellent overview of the spectrum of activities in the photoacoustic and photothermal field worldwide, and thus is suitable both for the specialist and for the newcomer to this multidisciplinary research area.
Author:
Publisher: Academic Press
ISBN: 008086452X
Category : Science
Languages : en
Pages : 593
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.
Author:
Publisher:
ISBN:
Category : Solids
Languages : en
Pages : 880
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Book Description
Author: Andreas Mandelis
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 576
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
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Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
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Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
