Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 960
Book Description
International Aerospace Abstracts
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 960
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 960
Book Description
Silicon Photonics II
Author: David J. Lockwood
Publisher: Springer Science & Business Media
ISBN: 3642105068
Category : Science
Languages : en
Pages : 264
Book Description
This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.
Publisher: Springer Science & Business Media
ISBN: 3642105068
Category : Science
Languages : en
Pages : 264
Book Description
This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 790
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 790
Book Description
Design and Analysis of Spiral Inductors
Author: Genemala Haobijam
Publisher: Springer Science & Business Media
ISBN: 813221515X
Category : Technology & Engineering
Languages : en
Pages : 116
Book Description
The book addresses the critical challenges faced by the ever-expanding wireless communication market and the increasing frequency of operation due to continuous innovation of high performance integrated passive devices. The challenges like low quality factor, design complexity, manufacturability, processing cost, etc., are studied with examples and specifics. Silicon on-chip inductor was first reported in 1990 by Nguyen and Meyer in a 0.8 μm silicon bipolar complementary metal oxide semiconductor technology (BiCMOS). Since then, there has been an enormous progress in the research on the performance trends, design and optimization, modeling, quality factor enhancement techniques, etc., of spiral inductors and significant results are reported in literature for various applications. This book introduces an efficient method of determining the optimized layout of on chip spiral inductor. The important fundamental tradeoffs of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is also explored. The authors proposed an algorithm for accurate design and optimization of spiral inductors using a 3D electromagnetic simulator with minimum number of inductor structure simulations and thereby reducing its long computation time. A new multilayer pyramidal symmetric inductor structure is also proposed in this book. Being multilevel, the proposed inductor achieves high inductance to area ratio and hence occupies smaller silicon area.
Publisher: Springer Science & Business Media
ISBN: 813221515X
Category : Technology & Engineering
Languages : en
Pages : 116
Book Description
The book addresses the critical challenges faced by the ever-expanding wireless communication market and the increasing frequency of operation due to continuous innovation of high performance integrated passive devices. The challenges like low quality factor, design complexity, manufacturability, processing cost, etc., are studied with examples and specifics. Silicon on-chip inductor was first reported in 1990 by Nguyen and Meyer in a 0.8 μm silicon bipolar complementary metal oxide semiconductor technology (BiCMOS). Since then, there has been an enormous progress in the research on the performance trends, design and optimization, modeling, quality factor enhancement techniques, etc., of spiral inductors and significant results are reported in literature for various applications. This book introduces an efficient method of determining the optimized layout of on chip spiral inductor. The important fundamental tradeoffs of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is also explored. The authors proposed an algorithm for accurate design and optimization of spiral inductors using a 3D electromagnetic simulator with minimum number of inductor structure simulations and thereby reducing its long computation time. A new multilayer pyramidal symmetric inductor structure is also proposed in this book. Being multilevel, the proposed inductor achieves high inductance to area ratio and hence occupies smaller silicon area.
Comprehensive Dissertation Index
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1116
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1116
Book Description
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 934
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 934
Book Description
Power GaN Devices
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 816
Book Description
Semiconductor Radiation Detectors
Author: Gerhard Lutz
Publisher: Springer
ISBN: 3540716793
Category : Technology & Engineering
Languages : en
Pages : 351
Book Description
Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Publisher: Springer
ISBN: 3540716793
Category : Technology & Engineering
Languages : en
Pages : 351
Book Description
Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
MMIC Design
Author: Ian D. Robertson
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
Book Description
This book draws together all the important MMIC design methods and circuit topologies into one volume. It is essential reading as both a tutorial guide for those new to MMIC design and as a circuit design handbook for experienced designers. The contributors are acknowledged experts from industry and academia. The first four chapters describe the active and passive components, processing technology and CAD techniques. The design of the circuits is then covered in individual chapters treating amplifiers, mixers, phase shifters, switches and attenuators, and oscillators. The final three chapters describe silicon millimetre-wave circuits, measurement techniques and advanced circuit concepts.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
Book Description
This book draws together all the important MMIC design methods and circuit topologies into one volume. It is essential reading as both a tutorial guide for those new to MMIC design and as a circuit design handbook for experienced designers. The contributors are acknowledged experts from industry and academia. The first four chapters describe the active and passive components, processing technology and CAD techniques. The design of the circuits is then covered in individual chapters treating amplifiers, mixers, phase shifters, switches and attenuators, and oscillators. The final three chapters describe silicon millimetre-wave circuits, measurement techniques and advanced circuit concepts.