Optical Properties of Group III Nitride Alloys PDF Download
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Author: Tao Peng
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
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Author: Tao Peng
Publisher:
ISBN:
Category :
Languages : en
Pages : 86
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Book Description
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: James H. Edgar
Publisher: Institution of Electrical Engineers
ISBN:
Category : Science
Languages : en
Pages : 328
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Book Description
The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Author: Choudhury J. Praharaj
Publisher: John Wiley & Sons
ISBN: 111970863X
Category : Technology & Engineering
Languages : en
Pages : 196
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Book Description
Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.
Author: Mahmoud Omar Manasreh
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages :
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Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author: Rebecca Elizabeth Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Book Description
Author: Zhe Chuan Feng
Publisher: Imperial College Press
ISBN: 1860949037
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1860946364
Category : Mathematics
Languages : en
Pages : 442
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Book Description
III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in the field. It is useful for engineers, scientists and students.
Author: Thorsten Wethkamp
Publisher:
ISBN: 9783933346629
Category :
Languages : en
Pages : 88
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Book Description
