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Author:
Publisher:
ISBN:
Category : Oscillations
Languages : en
Pages : 238
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Book Description
The commercialization of wide band-gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this performance possible also create secondary consequences in these high-performance applications. One such consequence which is particularly difficult to manage in the context of power electronics applications is the occurrence of self-sustained oscillation. This problem has been recognized in the power electronics literature, but heretofore has not received an extensive analytical treatment. This dissertation provides a comprehensive analytical treatment of the self sustained oscillation phenomenon, logically separated into two components: an initial forced cycle and the subsequent oscillatory behavior. A large-signal model has been developed in order to predict the occurrence of the initial forced cycle based on a set of estimated initial conditions derived from a user-specified operating point. The establishment of the initial forced cycle as predicted by the large-signal model creates the bias conditions necessary for the analytical treatment of the subsequent oscillatory behavior. For this purpose, a small-signal model is presented which describes this phenomenon on the basis of recognizing the wide band-gap device and a minimal set of parasitic components associated with the gate and drain circuits as an unintended negative conductance oscillator. In the context of established oscillator design theory it has been shown both analytically and with simulation that negative differential conductance exhibited by the parasitic model explains the conditions under which selfsustained oscillation is likely to occur. Both the large-signal and small-signal models are shown to demonstrate good agreement with empirical results from pulsed switching experiments obtained over a wide range of operating conditions. In addition, a catalog of known solutions to the problem of self-sustained oscillation is presented, along with a discussion of a method by which the current work can be used by application designers to preclude the occurrence of this phenomenon in practical systems by design.
Author:
Publisher:
ISBN:
Category : Oscillations
Languages : en
Pages : 238
Get Book Here
Book Description
The commercialization of wide band-gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this performance possible also create secondary consequences in these high-performance applications. One such consequence which is particularly difficult to manage in the context of power electronics applications is the occurrence of self-sustained oscillation. This problem has been recognized in the power electronics literature, but heretofore has not received an extensive analytical treatment. This dissertation provides a comprehensive analytical treatment of the self sustained oscillation phenomenon, logically separated into two components: an initial forced cycle and the subsequent oscillatory behavior. A large-signal model has been developed in order to predict the occurrence of the initial forced cycle based on a set of estimated initial conditions derived from a user-specified operating point. The establishment of the initial forced cycle as predicted by the large-signal model creates the bias conditions necessary for the analytical treatment of the subsequent oscillatory behavior. For this purpose, a small-signal model is presented which describes this phenomenon on the basis of recognizing the wide band-gap device and a minimal set of parasitic components associated with the gate and drain circuits as an unintended negative conductance oscillator. In the context of established oscillator design theory it has been shown both analytically and with simulation that negative differential conductance exhibited by the parasitic model explains the conditions under which selfsustained oscillation is likely to occur. Both the large-signal and small-signal models are shown to demonstrate good agreement with empirical results from pulsed switching experiments obtained over a wide range of operating conditions. In addition, a catalog of known solutions to the problem of self-sustained oscillation is presented, along with a discussion of a method by which the current work can be used by application designers to preclude the occurrence of this phenomenon in practical systems by design.
Author: Douglas Pappis
Publisher: BoD – Books on Demand
ISBN: 3737609772
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Tianjiao Liu
Publisher:
ISBN:
Category :
Languages : en
Pages : 258
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Book Description
Author: Robert W. Erickson
Publisher: Springer Nature
ISBN: 3030438813
Category : Technology & Engineering
Languages : en
Pages : 1081
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Book Description
Fundamentals of Power Electronics, Third Edition, is an up-to-date and authoritative text and reference book on power electronics. This new edition retains the original objective and philosophy of focusing on the fundamental principles, models, and technical requirements needed for designing practical power electronic systems while adding a wealth of new material. Improved features of this new edition include: new material on switching loss mechanisms and their modeling; wide bandgap semiconductor devices; a more rigorous treatment of averaging; explanation of the Nyquist stability criterion; incorporation of the Tan and Middlebrook model for current programmed control; a new chapter on digital control of switching converters; major new chapters on advanced techniques of design-oriented analysis including feedback and extra-element theorems; average current control; new material on input filter design; new treatment of averaged switch modeling, simulation, and indirect power; and sampling effects in DCM, CPM, and digital control. Fundamentals of Power Electronics, Third Edition, is intended for use in introductory power electronics courses and related fields for both senior undergraduates and first-year graduate students interested in converter circuits and electronics, control systems, and magnetic and power systems. It will also be an invaluable reference for professionals working in power electronics, power conversion, and analog and digital electronics.
Author: Aristos Christou
Publisher:
ISBN: 9780692351062
Category :
Languages : en
Pages :
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Book Description
A white paper based on topics discussed at the Workshop on Defects in Wide Band Gap Semiconductors, held in College Park, MD, in September 2014.
Author: Katsuaki Suganuma
Publisher: Woodhead Publishing
ISBN: 0081020953
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Sergio Julian Jimenez
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
Wide bandgap (WBG) semiconductors are very attractive due to the outstanding characteristics that enable high-efficiency power electronics converters. However, due to the achievable fast transitions, these devices can suffer from unintended behavior such as under-damped ringing, voltage and current overshoot, half-bridge shoot-through, increased electromagnetic interference (EMI), and self-sustained oscillation (SSO).This thesis provides an analytical treatment of the triggering mechanism leading to SSO, which is an undesired phenomenon that may occur during turn-off transitions of WBG transistors due to their fast switching performance. For this analysis, a large signal model has been developed in state-space form to determine the likelihood of forced cycles in a simplified application circuit. Forced cycles are known to be a necessary but not sufficient condition for SSO to occur. In this sense, preventing the occurrence of forced cycles eliminates any possibility of destabilizing the circuit. Forced cycles occur when the gate-source voltage of the active switch rings back above threshold and causes channel conduction. The model presented in this thesis is capable of predicting the maximum gate-source voltage ring-back for any level of intrinsic parasitics and operating conditions. The model presented in this thesis is empirically validated with an application circuit utilizing GaN high electron mobility transistors (HEMTs). GaN HEMTs are known for very high switching speed, which also introduces susceptibility to SSO. The modeling framework introduced in this thesis is expected to be useful to application designers in creating application circuits that take maximum advantage of the attractive properties of WBG devices while ensuring immunity to the SSO phenomenon by some intentionally selected design margin.
