Numerical Simulations of Semiconductor Devices by Streamline- Diffusion Methods PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Numerical Simulations of Semiconductor Devices by Streamline- Diffusion Methods PDF full book. Access full book title Numerical Simulations of Semiconductor Devices by Streamline- Diffusion Methods by Xunlei Jiang. Download full books in PDF and EPUB format.
Author: Xunlei Jiang
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 140
Get Book Here
Book Description
Abstract: "Theoretical and practical aspects of the design and implementation of the streamline-diffusion (SD) method for semiconductor device models are explored systematically. Emphasis is placed on the hydrodynamic (HD) model, which is computationally more challenging than the drift-diffusion (DD) model, but provides some important physical information missing in the DD model. We devise a non-symmetric SD method for device simulations. This numerical method is uniformly used for the HD model (including a proposed simplification (SHD)) and the DD model. An appropriate SD operator is derived for the general non-symmetric convection-diffusion system. Linear stability analysis shows that our proposed numerical method is stable if the system can be symmetrized. Stability arguments and numerical experiments also suggest that the combination of the method of lines and the semidiscrete SD method may not be appropriate for the transient problem, a fact which often has been ignored in the literature. An efficient method, consistent with the SD method used for conservation laws, is developed for the potential equation. The method produces a more accurate electric field than the conventional Galerkin method. Moreover, it solves for the potential and electric field in a decoupled manner. We apply our numerical method to the diode and MESFET devices. Shocks for the diode in one and two space dimensions and the electron depletion near the gate for the MESFET in two space dimensions are simulated. Model comparisons are implemented. We observe that the difference in solutions between the HD and DD models is significant. The solution discrepancy between the full HD and SHD models is almost negligible in MESFET simulation, as in many other engineering applications. However, an exceptional case is found in our experiments."
Author: Xunlei Jiang
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 140
Get Book Here
Book Description
Abstract: "Theoretical and practical aspects of the design and implementation of the streamline-diffusion (SD) method for semiconductor device models are explored systematically. Emphasis is placed on the hydrodynamic (HD) model, which is computationally more challenging than the drift-diffusion (DD) model, but provides some important physical information missing in the DD model. We devise a non-symmetric SD method for device simulations. This numerical method is uniformly used for the HD model (including a proposed simplification (SHD)) and the DD model. An appropriate SD operator is derived for the general non-symmetric convection-diffusion system. Linear stability analysis shows that our proposed numerical method is stable if the system can be symmetrized. Stability arguments and numerical experiments also suggest that the combination of the method of lines and the semidiscrete SD method may not be appropriate for the transient problem, a fact which often has been ignored in the literature. An efficient method, consistent with the SD method used for conservation laws, is developed for the potential equation. The method produces a more accurate electric field than the conventional Galerkin method. Moreover, it solves for the potential and electric field in a decoupled manner. We apply our numerical method to the diode and MESFET devices. Shocks for the diode in one and two space dimensions and the electron depletion near the gate for the MESFET in two space dimensions are simulated. Model comparisons are implemented. We observe that the difference in solutions between the HD and DD models is significant. The solution discrepancy between the full HD and SHD models is almost negligible in MESFET simulation, as in many other engineering applications. However, an exceptional case is found in our experiments."
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 3709166195
Category : Computers
Languages : en
Pages : 515
Get Book Here
Book Description
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author: Peter A. Markowich
Publisher: Springer Science & Business Media
ISBN: 3709169615
Category : Mathematics
Languages : en
Pages : 261
Get Book Here
Book Description
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525
Get Book Here
Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author: Eric X. Jiang
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 25
Get Book Here
Book Description
Author: Uri M. Ascher
Publisher: SIAM
ISBN: 0898716527
Category : Mathematics
Languages : en
Pages : 403
Get Book Here
Book Description
Develops, analyses, and applies numerical methods for evolutionary, or time-dependent, differential problems.
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 9783211827369
Category : Computers
Languages : en
Pages : 526
Get Book Here
Book Description
SISDEP '95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 46
Get Book Here
Book Description
In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.
Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
Get Book Here
Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Author: Sumantri Slamet
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 64
Get Book Here
Book Description
